JPS4895181A - - Google Patents

Info

Publication number
JPS4895181A
JPS4895181A JP2568572A JP2568572A JPS4895181A JP S4895181 A JPS4895181 A JP S4895181A JP 2568572 A JP2568572 A JP 2568572A JP 2568572 A JP2568572 A JP 2568572A JP S4895181 A JPS4895181 A JP S4895181A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2568572A
Other languages
Japanese (ja)
Other versions
JPS5143944B2 (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2568572A priority Critical patent/JPS5143944B2/ja
Publication of JPS4895181A publication Critical patent/JPS4895181A/ja
Publication of JPS5143944B2 publication Critical patent/JPS5143944B2/ja
Expired legal-status Critical Current

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  • Dicing (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2568572A 1972-03-15 1972-03-15 Expired JPS5143944B2 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2568572A JPS5143944B2 (zh) 1972-03-15 1972-03-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2568572A JPS5143944B2 (zh) 1972-03-15 1972-03-15

Publications (2)

Publication Number Publication Date
JPS4895181A true JPS4895181A (zh) 1973-12-06
JPS5143944B2 JPS5143944B2 (zh) 1976-11-25

Family

ID=12172630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2568572A Expired JPS5143944B2 (zh) 1972-03-15 1972-03-15

Country Status (1)

Country Link
JP (1) JPS5143944B2 (zh)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001091196A1 (fr) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US6818926B2 (en) 1999-07-27 2004-11-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6830948B2 (en) 1999-12-24 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US6844246B2 (en) 2001-03-22 2005-01-18 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
US6855620B2 (en) 2000-04-28 2005-02-15 Toyoda Gosei Co., Ltd. Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
US6861305B2 (en) 2000-03-31 2005-03-01 Toyoda Gosei Co., Ltd. Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6860943B2 (en) 2001-10-12 2005-03-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor
US6967122B2 (en) 2000-03-14 2005-11-22 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor and method for manufacturing the same
US6979584B2 (en) 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2006253724A (ja) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6881651B2 (en) 1999-05-21 2005-04-19 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6835966B2 (en) 1999-07-27 2004-12-28 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6893945B2 (en) 1999-07-27 2005-05-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride group compound semiconductor
US6818926B2 (en) 1999-07-27 2004-11-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6979584B2 (en) 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7560725B2 (en) 1999-12-24 2009-07-14 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6830948B2 (en) 1999-12-24 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US7462867B2 (en) 2000-03-14 2008-12-09 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor devices and method for fabricating the same
US6967122B2 (en) 2000-03-14 2005-11-22 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor and method for manufacturing the same
US6861305B2 (en) 2000-03-31 2005-03-01 Toyoda Gosei Co., Ltd. Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US7491984B2 (en) 2000-03-31 2009-02-17 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6855620B2 (en) 2000-04-28 2005-02-15 Toyoda Gosei Co., Ltd. Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
JP2001332762A (ja) * 2000-05-23 2001-11-30 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
WO2001091196A1 (fr) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production
US6861281B2 (en) 2000-05-23 2005-03-01 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device and method for producing the same
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
US6844246B2 (en) 2001-03-22 2005-01-18 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
US6860943B2 (en) 2001-10-12 2005-03-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor
JP2006253724A (ja) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子

Also Published As

Publication number Publication date
JPS5143944B2 (zh) 1976-11-25

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