JPS5142465A - Kinitsunidoopusareta handotaitanketsushobonoseizohoho - Google Patents

Kinitsunidoopusareta handotaitanketsushobonoseizohoho

Info

Publication number
JPS5142465A
JPS5142465A JP9741575A JP9741575A JPS5142465A JP S5142465 A JPS5142465 A JP S5142465A JP 9741575 A JP9741575 A JP 9741575A JP 9741575 A JP9741575 A JP 9741575A JP S5142465 A JPS5142465 A JP S5142465A
Authority
JP
Japan
Prior art keywords
kinitsunidoopusareta
handotaitanketsushobonoseizohoho
kinitsunidoopusareta handotaitanketsushobonoseizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9741575A
Other languages
English (en)
Inventor
Keraa Uoruganku
Myuurubaueru Arufuretsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5142465A publication Critical patent/JPS5142465A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9741575A 1974-08-13 1975-08-11 Kinitsunidoopusareta handotaitanketsushobonoseizohoho Pending JPS5142465A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742438852 DE2438852C3 (de) 1974-08-13 1974-08-13 Verfahren zum Herstellen von homogen-dotierten Halbleitereinkristallstäben

Publications (1)

Publication Number Publication Date
JPS5142465A true JPS5142465A (ja) 1976-04-10

Family

ID=5923114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9741575A Pending JPS5142465A (ja) 1974-08-13 1975-08-11 Kinitsunidoopusareta handotaitanketsushobonoseizohoho

Country Status (2)

Country Link
JP (1) JPS5142465A (ja)
DE (1) DE2438852C3 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494478A (en) * 1977-12-30 1979-07-26 Wacker Chemitronic Manufacture of high purity silicon single crystal
JP2000327476A (ja) * 1999-05-24 2000-11-28 Komatsu Electronic Metals Co Ltd 半導体単結晶製造装置および製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498846A (en) * 1967-03-03 1970-03-03 Siemens Ag Method of growing a rod-shaped monocrystal of semiconductor material by crucible-free floating zone melting

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498846A (en) * 1967-03-03 1970-03-03 Siemens Ag Method of growing a rod-shaped monocrystal of semiconductor material by crucible-free floating zone melting

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494478A (en) * 1977-12-30 1979-07-26 Wacker Chemitronic Manufacture of high purity silicon single crystal
JPS5727077B2 (ja) * 1977-12-30 1982-06-08
JP2000327476A (ja) * 1999-05-24 2000-11-28 Komatsu Electronic Metals Co Ltd 半導体単結晶製造装置および製造方法
JP4521621B2 (ja) * 1999-05-24 2010-08-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造方法

Also Published As

Publication number Publication date
DE2438852C3 (de) 1980-02-07
DE2438852A1 (de) 1976-02-26
DE2438852B2 (de) 1979-05-23

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