JPS5140073A - Shirikonnodoopinguhoho - Google Patents

Shirikonnodoopinguhoho

Info

Publication number
JPS5140073A
JPS5140073A JP8047875A JP8047875A JPS5140073A JP S5140073 A JPS5140073 A JP S5140073A JP 8047875 A JP8047875 A JP 8047875A JP 8047875 A JP8047875 A JP 8047875A JP S5140073 A JPS5140073 A JP S5140073A
Authority
JP
Japan
Prior art keywords
shirikonnodoopinguhoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8047875A
Other languages
English (en)
Inventor
Buruchaa Yoahimu
Haasu Erunsuto
Maruchin Yoahimu
Roisheru Konraato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742431163 external-priority patent/DE2431163C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5140073A publication Critical patent/JPS5140073A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H5/00—Applications of radiation from radioactive sources or arrangements therefor, not otherwise provided for 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8047875A 1974-06-28 1975-06-27 Shirikonnodoopinguhoho Pending JPS5140073A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742431163 DE2431163C3 (de) 1974-06-28 Verfahren zum Herstellen von dotiertem Silicium

Publications (1)

Publication Number Publication Date
JPS5140073A true JPS5140073A (ja) 1976-04-03

Family

ID=5919236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8047875A Pending JPS5140073A (ja) 1974-06-28 1975-06-27 Shirikonnodoopinguhoho

Country Status (1)

Country Link
JP (1) JPS5140073A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144338A (en) * 1978-05-02 1979-11-10 Schering Ag Nnethylcarbanilic acidd*33methoxycarbonylamino* phenylester*its manufacture and selective herbicide containing said compound
JPS5598151A (en) * 1979-01-15 1980-07-25 Schering Ag Diurethane*its manufacture and herbicide containing diurethane

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144338A (en) * 1978-05-02 1979-11-10 Schering Ag Nnethylcarbanilic acidd*33methoxycarbonylamino* phenylester*its manufacture and selective herbicide containing said compound
JPS5598151A (en) * 1979-01-15 1980-07-25 Schering Ag Diurethane*its manufacture and herbicide containing diurethane
JPS5823865B2 (ja) * 1979-01-15 1983-05-18 シエ−リング・アクチエンゲゼルシヤフト ジウレタン、その製造方法及びジウレタンを含有する除草剤

Also Published As

Publication number Publication date
DE2431163B2 (de) 1976-10-28
DE2431163A1 (de) 1976-01-08

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JPS5140073A (ja) Shirikonnodoopinguhoho