JPS5123865B2 - - Google Patents

Info

Publication number
JPS5123865B2
JPS5123865B2 JP47082732A JP8273272A JPS5123865B2 JP S5123865 B2 JPS5123865 B2 JP S5123865B2 JP 47082732 A JP47082732 A JP 47082732A JP 8273272 A JP8273272 A JP 8273272A JP S5123865 B2 JPS5123865 B2 JP S5123865B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47082732A
Other languages
Japanese (ja)
Other versions
JPS4830879A (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4830879A publication Critical patent/JPS4830879A/ja
Publication of JPS5123865B2 publication Critical patent/JPS5123865B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP47082732A 1971-08-19 1972-08-18 Expired JPS5123865B2 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17315271A 1971-08-19 1971-08-19

Publications (2)

Publication Number Publication Date
JPS4830879A JPS4830879A (cs) 1973-04-23
JPS5123865B2 true JPS5123865B2 (cs) 1976-07-20

Family

ID=22630755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47082732A Expired JPS5123865B2 (cs) 1971-08-19 1972-08-18

Country Status (5)

Country Link
JP (1) JPS5123865B2 (cs)
CA (1) CA1101548A (cs)
DE (1) DE2240249C3 (cs)
FR (1) FR2149568B1 (cs)
GB (1) GB1395558A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875176A (cs) * 1972-01-12 1973-10-09
DE2351393C3 (de) * 1973-10-12 1978-06-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebeanordnung in Zwei-Phasen-Technik und Verfahren zu ihrer Herstellung
JPS5815271A (ja) * 1981-07-21 1983-01-28 Nec Corp 電荷結合素子

Also Published As

Publication number Publication date
GB1395558A (en) 1975-05-29
DE2240249C3 (de) 1975-05-07
DE2240249A1 (de) 1973-02-22
CA1101548A (en) 1981-05-19
DE2240249B2 (cs) 1974-05-22
FR2149568B1 (cs) 1976-10-29
FR2149568A1 (cs) 1973-03-30
JPS4830879A (cs) 1973-04-23

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