JPS51141799A - The formation of boron nitride films - Google Patents
The formation of boron nitride filmsInfo
- Publication number
- JPS51141799A JPS51141799A JP6539975A JP6539975A JPS51141799A JP S51141799 A JPS51141799 A JP S51141799A JP 6539975 A JP6539975 A JP 6539975A JP 6539975 A JP6539975 A JP 6539975A JP S51141799 A JPS51141799 A JP S51141799A
- Authority
- JP
- Japan
- Prior art keywords
- formation
- boron nitride
- nitride films
- boron
- nitrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6539975A JPS51141799A (en) | 1975-06-02 | 1975-06-02 | The formation of boron nitride films |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6539975A JPS51141799A (en) | 1975-06-02 | 1975-06-02 | The formation of boron nitride films |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51141799A true JPS51141799A (en) | 1976-12-06 |
Family
ID=13285885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6539975A Pending JPS51141799A (en) | 1975-06-02 | 1975-06-02 | The formation of boron nitride films |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51141799A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002241930A (ja) * | 2001-02-19 | 2002-08-28 | Hamamatsu Photonics Kk | 窒化物薄膜作製方法 |
-
1975
- 1975-06-02 JP JP6539975A patent/JPS51141799A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002241930A (ja) * | 2001-02-19 | 2002-08-28 | Hamamatsu Photonics Kk | 窒化物薄膜作製方法 |
JP4619554B2 (ja) * | 2001-02-19 | 2011-01-26 | 浜松ホトニクス株式会社 | 窒化物薄膜作製方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1034453A (en) | Thermal collector of solar energy adapted for high temperature operation | |
JPS5352104A (en) | Production of disc recording disc | |
JPS5258940A (en) | Laser recording method and device | |
JPS5270991A (en) | Gas phase reactor by use of laser | |
JPS51141799A (en) | The formation of boron nitride films | |
JPS51137950A (en) | Heat insulator for high temperature duty and its manufacturing method | |
JPS51141800A (en) | The formation of aluminum nitride films | |
JPS5239893A (en) | Device for irradiating a laser beam | |
JPS5214389A (en) | Semiconductor laser device | |
JPS5211786A (en) | Method of manufacturing p-m junction type solar battery | |
JPS51115764A (en) | Manufacturing method of a magnetron | |
JPS5244562A (en) | Epitaxial growth method | |
JPS5420190A (en) | Preparation of bacterial cells | |
JPS53123657A (en) | Production of semiconductor unit | |
JPS5211788A (en) | Method of manufacturing p-n junction type solar battery | |
JPS5210931A (en) | Heliostat for solar heat electric generator | |
JPS546745A (en) | Resonator | |
JPS5416363A (en) | Manufacture of dies | |
JPS51148396A (en) | Solid laser device | |
JPS51121124A (en) | Power source means | |
JPS51143348A (en) | Apparatus for focusing a light beam | |
JPS546767A (en) | Manufacture of semiconductor device | |
JPS5372453A (en) | Manufacture for semiconductor device | |
JPS51113742A (en) | Beam splitter for laser | |
JPS53102669A (en) | Manufacture for semiconductor device |