JPS51141800A - The formation of aluminum nitride films - Google Patents

The formation of aluminum nitride films

Info

Publication number
JPS51141800A
JPS51141800A JP6540075A JP6540075A JPS51141800A JP S51141800 A JPS51141800 A JP S51141800A JP 6540075 A JP6540075 A JP 6540075A JP 6540075 A JP6540075 A JP 6540075A JP S51141800 A JPS51141800 A JP S51141800A
Authority
JP
Japan
Prior art keywords
aluminum nitride
nitride films
formation
laser beam
heat source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6540075A
Other languages
Japanese (ja)
Inventor
Takashi Nishida
Kazuyoshi Ueki
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6540075A priority Critical patent/JPS51141800A/en
Publication of JPS51141800A publication Critical patent/JPS51141800A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain aluminum nitride films rapidly at low temperatures by vacuum evaporation method under irradiation of high power laser beam as a heat source.
JP6540075A 1975-06-02 1975-06-02 The formation of aluminum nitride films Pending JPS51141800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6540075A JPS51141800A (en) 1975-06-02 1975-06-02 The formation of aluminum nitride films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6540075A JPS51141800A (en) 1975-06-02 1975-06-02 The formation of aluminum nitride films

Publications (1)

Publication Number Publication Date
JPS51141800A true JPS51141800A (en) 1976-12-06

Family

ID=13285915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6540075A Pending JPS51141800A (en) 1975-06-02 1975-06-02 The formation of aluminum nitride films

Country Status (1)

Country Link
JP (1) JPS51141800A (en)

Similar Documents

Publication Publication Date Title
JPS51141800A (en) The formation of aluminum nitride films
JPS51141799A (en) The formation of boron nitride films
JPS5423492A (en) X-ray generator
JPS5214389A (en) Semiconductor laser device
IT8024641A0 (en) THROUGH POWER THROUGH AS A WELDING PROCEDURE ALSO USING AN ELECTRON BEAM IMPLEMENTATION DEVICE TO REGULATE THIS PROCEDURE. THROUGH ABSORBED POWER, OR
JPS5211786A (en) Method of manufacturing p-m junction type solar battery
JPS51115764A (en) Manufacturing method of a magnetron
JPS5244562A (en) Epitaxial growth method
JPS5211788A (en) Method of manufacturing p-n junction type solar battery
JPS5210931A (en) Heliostat for solar heat electric generator
JPS51121124A (en) Power source means
SU565199A1 (en) Method for heat emission intensification
JPS5234442A (en) Absorbing freezer of combined single and double effects
JPS51143348A (en) Apparatus for focusing a light beam
JPS51113742A (en) Beam splitter for laser
JPS53102669A (en) Manufacture for semiconductor device
JPS5231689A (en) Semiconductor laser apparatus
JPS5211895A (en) Forming equipment for dooble parallel beams
JPS51120169A (en) Method of cooling heat generating bodies
JPS5274288A (en) Production of semiconductor device
JPS5232149A (en) Method of jointing pipes with heat absorbing plate
JPS5218168A (en) Electrode formation method of semiconductor
JPS5272559A (en) Direct heated style cathode for electron tube
JPS5399687A (en) Method of manufacturing shield beam type electric bulb
JPS52117650A (en) Wavelength conversion film