JPS51134074A - Method to manufacture the semiconductor unit - Google Patents

Method to manufacture the semiconductor unit

Info

Publication number
JPS51134074A
JPS51134074A JP50058200A JP5820075A JPS51134074A JP S51134074 A JPS51134074 A JP S51134074A JP 50058200 A JP50058200 A JP 50058200A JP 5820075 A JP5820075 A JP 5820075A JP S51134074 A JPS51134074 A JP S51134074A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor unit
lateral transistor
bulk
constitute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50058200A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5711150B2 (enrdf_load_stackoverflow
Inventor
Hajime Kamioka
Mikio Takagi
Kazufumi Nakayama
Mamoru Takahashi
Shoji Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50058200A priority Critical patent/JPS51134074A/ja
Publication of JPS51134074A publication Critical patent/JPS51134074A/ja
Publication of JPS5711150B2 publication Critical patent/JPS5711150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50058200A 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit Granted JPS51134074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50058200A JPS51134074A (en) 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50058200A JPS51134074A (en) 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit

Publications (2)

Publication Number Publication Date
JPS51134074A true JPS51134074A (en) 1976-11-20
JPS5711150B2 JPS5711150B2 (enrdf_load_stackoverflow) 1982-03-02

Family

ID=13077375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50058200A Granted JPS51134074A (en) 1975-05-15 1975-05-15 Method to manufacture the semiconductor unit

Country Status (1)

Country Link
JP (1) JPS51134074A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201070A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3586341T2 (de) * 1984-02-03 1993-02-04 Advanced Micro Devices Inc Bipolartransistor mit in schlitzen gebildeten aktiven elementen.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201070A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5711150B2 (enrdf_load_stackoverflow) 1982-03-02

Similar Documents

Publication Publication Date Title
JPS51130183A (en) Semiconductor ic and its process
JPS51134074A (en) Method to manufacture the semiconductor unit
JPS5223275A (en) Field effect transistor and its manufacturing method
JPS5275987A (en) Gate protecting device
JPS5312261A (en) Output circuit of semiconductor device
JPS51138394A (en) Semiconductor device
JPS51121272A (en) Manufacturing method for semiconductor devices
JPS5322383A (en) Iil simiconductor device
JPS51123048A (en) Delay circuit having the transfer gate
JPS5344182A (en) Semiconductor device
JPS545635A (en) Semiconductor memory device
CA933675A (en) Method of manufacturing a semiconductor device and semiconductor device obtained by using the method
JPS5344181A (en) Production of semiconductor device
JPS523362A (en) Distribution constant type high frequency transistor circuit
JPS51134075A (en) Method to manufacture the semiconductor unit
JPS5267262A (en) Wire bonding method and its device
AU258431B2 (en) Process for producing new dibenzo - diazepinone compounds and the compounds so produced
JPS51117879A (en) Mis-type field effect transistor
JPS5211875A (en) Manufacturing method of a semiconductor device
CA608337A (en) Process for producing semiconductor devices
AU237865B2 (en) Improvements in or relating toa continuous process for producing semiconductor devices
JPS51139246A (en) Mos integrating circuit
CA604377A (en) Power transistors and process for making the same
CA598464A (en) Belts and method for manufacturing same
CA599542A (en) Photo-conductive device and method of manufacturing the same