JPS51107778A - - Google Patents

Info

Publication number
JPS51107778A
JPS51107778A JP51016881A JP1688176A JPS51107778A JP S51107778 A JPS51107778 A JP S51107778A JP 51016881 A JP51016881 A JP 51016881A JP 1688176 A JP1688176 A JP 1688176A JP S51107778 A JPS51107778 A JP S51107778A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51016881A
Other languages
Japanese (ja)
Inventor
Gurauru Yurugen
Muruman Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS51107778A publication Critical patent/JPS51107778A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47Schottky barrier electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7327Inverse vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP51016881A 1975-02-19 1976-02-18 Pending JPS51107778A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752507148 DE2507148A1 (de) 1975-02-19 1975-02-19 Inverser planartransistor

Publications (1)

Publication Number Publication Date
JPS51107778A true JPS51107778A (xx) 1976-09-24

Family

ID=5939287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51016881A Pending JPS51107778A (xx) 1975-02-19 1976-02-18

Country Status (5)

Country Link
JP (1) JPS51107778A (xx)
DE (1) DE2507148A1 (xx)
FR (1) FR2301924A1 (xx)
GB (1) GB1495864A (xx)
IT (1) IT1055195B (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267275A (en) * 1976-10-08 1977-06-03 Sony Corp Semiconductor unit
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2180517A1 (en) 2008-10-24 2010-04-28 Epcos Ag Pnp bipolar transistor with lateral collector and method of production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911659U (xx) * 1972-05-09 1974-01-31

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911659U (xx) * 1972-05-09 1974-01-31

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
JPS5267275A (en) * 1976-10-08 1977-06-03 Sony Corp Semiconductor unit
JPS5528226B2 (xx) * 1976-10-08 1980-07-26

Also Published As

Publication number Publication date
FR2301924A1 (fr) 1976-09-17
IT1055195B (it) 1981-12-21
DE2507148A1 (de) 1976-09-02
GB1495864A (en) 1977-12-21
FR2301924B1 (xx) 1982-04-23

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