JPS5098795A - - Google Patents

Info

Publication number
JPS5098795A
JPS5098795A JP14854074A JP14854074A JPS5098795A JP S5098795 A JPS5098795 A JP S5098795A JP 14854074 A JP14854074 A JP 14854074A JP 14854074 A JP14854074 A JP 14854074A JP S5098795 A JPS5098795 A JP S5098795A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14854074A
Other languages
Japanese (ja)
Other versions
JPS5725990B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5098795A publication Critical patent/JPS5098795A/ja
Publication of JPS5725990B2 publication Critical patent/JPS5725990B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
JP14854074A 1973-12-26 1974-12-26 Expired JPS5725990B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US427785A US3877052A (en) 1973-12-26 1973-12-26 Light-emitting semiconductor apparatus for optical fibers

Publications (2)

Publication Number Publication Date
JPS5098795A true JPS5098795A (en) 1975-08-06
JPS5725990B2 JPS5725990B2 (en) 1982-06-02

Family

ID=23696276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14854074A Expired JPS5725990B2 (en) 1973-12-26 1974-12-26

Country Status (8)

Country Link
US (1) US3877052A (en)
JP (1) JPS5725990B2 (en)
CA (1) CA1034240A (en)
DE (1) DE2460831A1 (en)
FR (1) FR2256545B1 (en)
GB (1) GB1474969A (en)
IT (1) IT1027177B (en)
NL (1) NL7416683A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756980A (en) * 1980-09-23 1982-04-05 Mitsubishi Electric Corp Light emitting element
JP2017522734A (en) * 2014-07-18 2017-08-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． LED light source for automotive applications

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458544A (en) * 1974-03-21 1976-12-15 Standard Telephones Cables Ltd Semiconductor laser stacks
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
US4143940A (en) * 1975-05-09 1979-03-13 U.S. Philips Corporation Device for coupling a radiation source to a monomode optical transmission fiber with the aid of a resonant cavity
US3991339A (en) * 1975-05-27 1976-11-09 Rca Corporation Light emitting diode with reflector
US4279690A (en) * 1975-10-28 1981-07-21 Texas Instruments Incorporated High-radiance emitters with integral microlens
US4088389A (en) * 1976-04-01 1978-05-09 Gte Laboratories Incorporated Large bandwidth optical communication systems utilizing an incoherent optical source
US4110661A (en) * 1977-04-01 1978-08-29 Rockwell International Corporation Light emitting device for optical communications
US4281253A (en) * 1978-08-29 1981-07-28 Optelecom, Inc. Applications of dual function electro-optic transducer in optical signal transmission
USRE31255E (en) * 1979-02-21 1983-05-24 Honeywell Inc. Light emitting and light detecting semiconductor device for interfacing with an optical fiber
US4216486A (en) * 1979-02-21 1980-08-05 Honeywell Inc. Light emitting and light detecting semiconductor device for interfacing with an optical fiber
SE7904751L (en) * 1979-05-31 1980-12-01 Asea Ab DEVICE FOR Saturation of current, temperature and / or voltage in thyristors
US4358851A (en) * 1980-02-28 1982-11-09 Xerox Corporation Fiber optic laser device and light emitter utilizing the device
CA1175884A (en) * 1980-06-25 1984-10-09 Hugh St. L. Dannatt Light emitting diode assembly
US4728999A (en) * 1980-06-25 1988-03-01 Pitney Bowes Inc. Light emitting diode assembly
US4360729A (en) * 1980-11-17 1982-11-23 Geosource Inc. Seismic cable connector with optical transceiver
JPS6183858A (en) * 1984-09-28 1986-04-28 三菱電機株式会社 Refrigerator
US4787086A (en) * 1986-05-19 1988-11-22 American Telephone And Telegraph Company, At&T Bell Laboratories High-power, fundamental transverse mode laser
JPH04212939A (en) * 1990-12-06 1992-08-04 Pioneer Electron Corp Wavelength converting element
US5265792A (en) * 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
TW230822B (en) * 1993-03-02 1994-09-21 Sumitomo Electric Industries
DE19537545A1 (en) 1995-10-09 1997-04-10 Telefunken Microelectron Luminescence diode manufacturing method with layer group contg. pre-junction
DE19537544A1 (en) * 1995-10-09 1997-04-10 Telefunken Microelectron Luminescence diode
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
DE10112542B9 (en) * 2001-03-15 2013-01-03 Osram Opto Semiconductors Gmbh Radiation-emitting optical component
US6730940B1 (en) * 2002-10-29 2004-05-04 Lumileds Lighting U.S., Llc Enhanced brightness light emitting device spot emitter
US20040173808A1 (en) * 2003-03-07 2004-09-09 Bor-Jen Wu Flip-chip like light emitting device package
US6969634B2 (en) * 2003-09-24 2005-11-29 Lucent Technologies Inc. Semiconductor layers with roughness patterning
US7080932B2 (en) * 2004-01-26 2006-07-25 Philips Lumileds Lighting Company, Llc LED with an optical system to increase luminance by recycling emitted light
TW200602585A (en) * 2004-03-16 2006-01-16 Koninkl Philips Electronics Nv High brightness illumination device with incoherent solid state light source
DE102006041460A1 (en) * 2006-09-04 2008-03-13 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor chip, has semiconductor layer sequence with active area for producing electromagnetic radiation, which is arranged between base and side surfaces, and reflecting layer is applied on base and side surfaces
US8384107B1 (en) * 2009-06-22 2013-02-26 Frank Shum Increasing the brightness of a light source by using a thin-film dielectric
WO2020025054A1 (en) * 2018-08-03 2020-02-06 海迪科（南通）光电科技有限公司 Light-emitting device and method for fabricating same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3283207A (en) * 1963-05-27 1966-11-01 Ibm Light-emitting transistor system
US3703670A (en) * 1969-02-28 1972-11-21 Corning Glass Works Electroluminescent diode configuration and method of forming the same
US3739217A (en) * 1969-06-23 1973-06-12 Bell Telephone Labor Inc Surface roughening of electroluminescent diodes
US3667007A (en) * 1970-02-25 1972-05-30 Rca Corp Semiconductor electron emitter
US3790868A (en) * 1972-10-27 1974-02-05 Hewlett Packard Co Efficient red emitting electroluminescent semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756980A (en) * 1980-09-23 1982-04-05 Mitsubishi Electric Corp Light emitting element
JP2017522734A (en) * 2014-07-18 2017-08-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． LED light source for automotive applications

Also Published As

Publication number Publication date
FR2256545B1 (en) 1978-04-28
FR2256545A1 (en) 1975-07-25
IT1027177B (en) 1978-11-20
GB1474969A (en) 1977-05-25
NL7416683A (en) 1975-06-30
US3877052A (en) 1975-04-08
JPS5725990B2 (en) 1982-06-02
CA1034240A (en) 1978-07-04
DE2460831A1 (en) 1975-07-03

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