JPS5098290A - - Google Patents

Info

Publication number
JPS5098290A
JPS5098290A JP49130534A JP13053474A JPS5098290A JP S5098290 A JPS5098290 A JP S5098290A JP 49130534 A JP49130534 A JP 49130534A JP 13053474 A JP13053474 A JP 13053474A JP S5098290 A JPS5098290 A JP S5098290A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49130534A
Other versions
JPS5247320B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5098290A publication Critical patent/JPS5098290A/ja
Publication of JPS5247320B2 publication Critical patent/JPS5247320B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP49130534A 1973-12-26 1974-11-14 Expired JPS5247320B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US428537A US3925106A (en) 1973-12-26 1973-12-26 Ion bombardment method of producing integrated semiconductor circuit resistors of low temperature coefficient of resistance

Publications (2)

Publication Number Publication Date
JPS5098290A true JPS5098290A (ja) 1975-08-05
JPS5247320B2 JPS5247320B2 (ja) 1977-12-01

Family

ID=23699305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49130534A Expired JPS5247320B2 (ja) 1973-12-26 1974-11-14

Country Status (5)

Country Link
US (1) US3925106A (ja)
JP (1) JPS5247320B2 (ja)
CA (1) CA1019467A (ja)
GB (1) GB1483107A (ja)
IT (1) IT1027869B (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2627855A1 (de) * 1976-06-22 1977-12-29 Siemens Ag Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung
US4243433A (en) * 1978-01-18 1981-01-06 Gibbons James F Forming controlled inset regions by ion implantation and laser bombardment
JPS5624974A (en) * 1979-08-06 1981-03-10 Mitsubishi Electric Corp Manufacture of semiconductor element
FR2475068B1 (fr) * 1980-02-01 1986-05-16 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
US4383869A (en) * 1981-06-15 1983-05-17 Rca Corporation Method for enhancing electron mobility in GaAs
JPS58132922A (ja) * 1982-02-01 1983-08-08 Toshiba Corp 半導体装置の製造方法
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
FR2602093B1 (fr) * 1985-12-27 1988-10-14 Bull Sa Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
JPH0521448A (ja) * 1991-07-10 1993-01-29 Sharp Corp 半導体装置の製造方法
US5468974A (en) * 1994-05-26 1995-11-21 Lsi Logic Corporation Control and modification of dopant distribution and activation in polysilicon
US5506167A (en) * 1995-04-13 1996-04-09 United Microelectronics Corp. Method of making a high resistance drain junction resistor in a SRAM
US6465370B1 (en) * 1998-06-26 2002-10-15 Infineon Technologies Ag Low leakage, low capacitance isolation material
US6315384B1 (en) 1999-03-08 2001-11-13 Hewlett-Packard Company Thermal inkjet printhead and high-efficiency polycrystalline silicon resistor system for use therein
US6267471B1 (en) 1999-10-26 2001-07-31 Hewlett-Packard Company High-efficiency polycrystalline silicon resistor system for use in a thermal inkjet printhead
RU2331136C9 (ru) * 2004-08-24 2008-12-27 Самсунг Электроникс Ко., Лтд. СПОСОБ ФОРМИРОВАНИЯ p-n ПЕРЕХОДОВ В КРЕМНИИ
KR100679610B1 (ko) * 2006-01-16 2007-02-06 삼성전자주식회사 단결정 구조를 갖는 박막의 형성 방법
RU2349985C1 (ru) * 2007-10-31 2009-03-20 Открытое акционерное общество "Московский завод "САПФИР" СПОСОБ ИЗГОТОВЛЕНИЯ ПЛАНАРНОГО р-n ПЕРЕХОДА НА ОСНОВЕ ВЫСОКООМНОГО КРЕМНИЯ р-ТИПА ПРОВОДИМОСТИ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615875A (en) * 1968-09-30 1971-10-26 Hitachi Ltd Method for fabricating semiconductor devices by ion implantation
JPS4837232B1 (ja) * 1968-12-04 1973-11-09

Also Published As

Publication number Publication date
IT1027869B (it) 1978-12-20
GB1483107A (en) 1977-08-17
US3925106A (en) 1975-12-09
JPS5247320B2 (ja) 1977-12-01
CA1019467A (en) 1977-10-18

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