JPS508450A - - Google Patents

Info

Publication number
JPS508450A
JPS508450A JP48132256A JP13225673A JPS508450A JP S508450 A JPS508450 A JP S508450A JP 48132256 A JP48132256 A JP 48132256A JP 13225673 A JP13225673 A JP 13225673A JP S508450 A JPS508450 A JP S508450A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48132256A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS508450A publication Critical patent/JPS508450A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Logic Circuits (AREA)
  • Dc Digital Transmission (AREA)
  • Cable Transmission Systems, Equalization Of Radio And Reduction Of Echo (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
JP48132256A 1972-12-29 1973-11-27 Pending JPS508450A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00319266A US3805095A (en) 1972-12-29 1972-12-29 Fet threshold compensating bias circuit

Publications (1)

Publication Number Publication Date
JPS508450A true JPS508450A (ja) 1975-01-28

Family

ID=23241538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48132256A Pending JPS508450A (ja) 1972-12-29 1973-11-27

Country Status (5)

Country Link
US (1) US3805095A (ja)
JP (1) JPS508450A (ja)
DE (1) DE2359647A1 (ja)
FR (1) FR2212643B1 (ja)
GB (1) GB1431504A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572351U (ja) * 1979-12-05 1980-05-19
JPS5683131A (en) * 1979-12-11 1981-07-07 Nec Corp Semiconductor circuit
JPS56116330A (en) * 1980-02-20 1981-09-12 Oki Electric Ind Co Ltd Output interface circuit
JPS5713819A (en) * 1980-06-27 1982-01-23 Oki Electric Ind Co Ltd Output interface circuit
JPS60217596A (ja) * 1985-02-21 1985-10-31 Toshiba Corp 半導体集積回路

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
DE2812378C2 (de) * 1978-03-21 1982-04-29 Siemens AG, 1000 Berlin und 8000 München Substratvorspannungsgenerator für integrierte MIS-Schaltkreise
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
US4260909A (en) * 1978-08-30 1981-04-07 Bell Telephone Laboratories, Incorporated Back gate bias voltage generator circuit
US4284905A (en) * 1979-05-31 1981-08-18 Bell Telephone Laboratories, Incorporated IGFET Bootstrap circuit
DE2947712C2 (de) * 1979-11-27 1984-07-05 EUROSIL electronic GmbH, 8057 Eching Schaltungsanordnung in integrierter MOS-Technik zur impulsartigen Speisung einer Last
JPS56122526A (en) * 1980-03-03 1981-09-26 Fujitsu Ltd Semiconductor integrated circuit
US4433257A (en) * 1980-03-03 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
DE3105147A1 (de) * 1981-02-12 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale halbleiterschaltung
US4580070A (en) * 1983-03-21 1986-04-01 Honeywell Inc. Low power signal detector
JPH0697738B2 (ja) * 1985-10-07 1994-11-30 ソニー株式会社 ロ−レベルクランプ回路
US4888505A (en) * 1988-05-02 1989-12-19 National Semiconductor Corporation Voltage multiplier compatible with a self-isolated C/DMOS process
IT1227561B (it) * 1988-11-07 1991-04-16 Sgs Thomson Microelectronics Dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza
DE69328623T2 (de) * 1993-11-30 2001-02-08 St Microelectronics Srl Stabile Referenzspannungsgeneratorschaltung
JPH09162713A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
US3480796A (en) * 1966-12-14 1969-11-25 North American Rockwell Mos transistor driver using a control signal
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3582688A (en) * 1969-02-06 1971-06-01 Motorola Inc Controlled hysteresis trigger circuit
US3564290A (en) * 1969-03-13 1971-02-16 Ibm Regenerative fet source follower
US3648065A (en) * 1970-01-28 1972-03-07 Ibm Storage circuit for shift register
US3638047A (en) * 1970-07-07 1972-01-25 Gen Instrument Corp Delay and controlled pulse-generating circuit
US3648153A (en) * 1970-11-04 1972-03-07 Rca Corp Reference voltage source
US3697777A (en) * 1971-05-17 1972-10-10 Rca Corp Signal generating circuit including a pair of cascade connected field effect transistors
US3708689A (en) * 1971-10-27 1973-01-02 Motorola Inc Voltage level translating circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572351U (ja) * 1979-12-05 1980-05-19
JPS5683131A (en) * 1979-12-11 1981-07-07 Nec Corp Semiconductor circuit
JPS56116330A (en) * 1980-02-20 1981-09-12 Oki Electric Ind Co Ltd Output interface circuit
JPH0127611B2 (ja) * 1980-02-20 1989-05-30 Oki Denki Kogyo Kk
JPS5713819A (en) * 1980-06-27 1982-01-23 Oki Electric Ind Co Ltd Output interface circuit
JPS60217596A (ja) * 1985-02-21 1985-10-31 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
DE2359647A1 (de) 1974-07-04
GB1431504A (en) 1976-04-07
US3805095A (en) 1974-04-16
FR2212643B1 (ja) 1977-09-30
FR2212643A1 (ja) 1974-07-26

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