JPS5081677A - - Google Patents

Info

Publication number
JPS5081677A
JPS5081677A JP13056074A JP13056074A JPS5081677A JP S5081677 A JPS5081677 A JP S5081677A JP 13056074 A JP13056074 A JP 13056074A JP 13056074 A JP13056074 A JP 13056074A JP S5081677 A JPS5081677 A JP S5081677A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13056074A
Other languages
Japanese (ja)
Other versions
JPS5424817B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5081677A publication Critical patent/JPS5081677A/ja
Publication of JPS5424817B2 publication Critical patent/JPS5424817B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP13056074A 1973-11-15 1974-11-14 Expired JPS5424817B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7340669A FR2251370B1 (enExample) 1973-11-15 1973-11-15

Publications (2)

Publication Number Publication Date
JPS5081677A true JPS5081677A (enExample) 1975-07-02
JPS5424817B2 JPS5424817B2 (enExample) 1979-08-23

Family

ID=9127789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13056074A Expired JPS5424817B2 (enExample) 1973-11-15 1974-11-14

Country Status (4)

Country Link
JP (1) JPS5424817B2 (enExample)
DE (1) DE2453509C2 (enExample)
FR (1) FR2251370B1 (enExample)
GB (1) GB1491255A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112772U (enExample) * 1976-02-20 1977-08-26
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS54150971A (en) * 1978-05-19 1979-11-27 Toshiba Corp Liquid-phase epitaxial growth method for semiconductor element
WO1991004572A1 (fr) * 1989-09-21 1991-04-04 Asm Japan K.K. Dispositif de support de substrat pour appareil cvd
US5192371A (en) * 1991-05-21 1993-03-09 Asm Japan K.K. Substrate supporting apparatus for a CVD apparatus
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2015160747A (ja) * 2014-02-25 2015-09-07 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2018109239A (ja) * 2018-02-22 2018-07-12 日本電気硝子株式会社 デバイスの製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2463819A1 (fr) * 1979-08-21 1981-02-27 Thomson Csf Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression
JPS5670830A (en) * 1979-11-10 1981-06-13 Toshiba Corp Vapor growth method
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
JPS6216516A (ja) * 1985-07-15 1987-01-24 Mitsubishi Electric Corp 半導体製造装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944517U (enExample) * 1972-07-21 1974-04-19

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553037A (en) * 1968-04-05 1971-01-05 Stewart Warner Corp Gas diffusion method for fabricating semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944517U (enExample) * 1972-07-21 1974-04-19

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112772U (enExample) * 1976-02-20 1977-08-26
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS54150971A (en) * 1978-05-19 1979-11-27 Toshiba Corp Liquid-phase epitaxial growth method for semiconductor element
WO1991004572A1 (fr) * 1989-09-21 1991-04-04 Asm Japan K.K. Dispositif de support de substrat pour appareil cvd
US5192371A (en) * 1991-05-21 1993-03-09 Asm Japan K.K. Substrate supporting apparatus for a CVD apparatus
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2015160747A (ja) * 2014-02-25 2015-09-07 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2018109239A (ja) * 2018-02-22 2018-07-12 日本電気硝子株式会社 デバイスの製造方法

Also Published As

Publication number Publication date
DE2453509A1 (de) 1975-05-22
JPS5424817B2 (enExample) 1979-08-23
DE2453509C2 (de) 1983-02-17
FR2251370A1 (enExample) 1975-06-13
FR2251370B1 (enExample) 1978-12-01
GB1491255A (en) 1977-11-09

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