Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/188—Organisation of a multiplicity of shift registers, e.g. regeneration, timing or input-output circuits
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
  • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G11C19/287—Organisation of a multiplicity of shift registers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Shift Register Type Memory (AREA)
• Pulse Circuits (AREA)
• Transforming Light Signals Into Electric Signals (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=23481332

Family Applications (1)

Country Status (6)

Cited By (1)

Families Citing this family (23)

Family Cites Families (2)

• 1973
  • 1973-07-02 US US375554A patent/US3889245A/en not_active Expired - Lifetime
• 1974
  • 1974-05-28 NL NL7407119A patent/NL7407119A/xx unknown
  • 1974-07-01 GB GB2900374A patent/GB1469565A/en not_active Expired
  • 1974-07-01 FR FR7422885A patent/FR2236249A1/fr not_active Withdrawn
  • 1974-07-01 JP JP49075278A patent/JPS5071237A/ja active Pending
  • 1974-07-01 GB GB1635076A patent/GB1469566A/en not_active Expired
  • 1974-07-02 DE DE2431782A patent/DE2431782A1/de active Pending

Also Published As

Similar Documents