JPS5068625A - - Google Patents

Info

Publication number
JPS5068625A
JPS5068625A JP49119466A JP11946674A JPS5068625A JP S5068625 A JPS5068625 A JP S5068625A JP 49119466 A JP49119466 A JP 49119466A JP 11946674 A JP11946674 A JP 11946674A JP S5068625 A JPS5068625 A JP S5068625A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49119466A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5068625A publication Critical patent/JPS5068625A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP49119466A 1973-10-18 1974-10-18 Pending JPS5068625A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US407710A US3898483A (en) 1973-10-18 1973-10-18 Bipolar memory circuit

Publications (1)

Publication Number Publication Date
JPS5068625A true JPS5068625A (ja) 1975-06-09

Family

ID=23613211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49119466A Pending JPS5068625A (ja) 1973-10-18 1974-10-18

Country Status (5)

Country Link
US (1) US3898483A (ja)
JP (1) JPS5068625A (ja)
DE (1) DE2445455A1 (ja)
FR (1) FR2248579B1 (ja)
GB (1) GB1470559A (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017180A (ja) * 1973-06-13 1975-02-22
JPS5153483A (ja) * 1974-11-06 1976-05-11 Hitachi Ltd
DE2460269A1 (de) * 1974-12-19 1976-07-01 Siemens Ag Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
US4180866A (en) * 1977-08-01 1979-12-25 Burroughs Corporation Single transistor memory cell employing an amorphous semiconductor threshold device
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
US4181981A (en) * 1977-12-30 1980-01-01 International Business Machines Corporation Bipolar two device dynamic memory cell
US4614897A (en) * 1984-05-11 1986-09-30 Rca Corporation Switching circuit
US4635087A (en) * 1984-12-28 1987-01-06 Motorola, Inc. Monolithic bipolar SCR memory cell
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US6781459B1 (en) 2003-04-24 2004-08-24 Omega Reception Technologies, Inc. Circuit for improved differential amplifier and other applications
JP4670458B2 (ja) * 2005-04-27 2011-04-13 株式会社日立製作所 半導体装置
CN115578978A (zh) * 2022-10-31 2023-01-06 云谷（固安）科技有限公司 像素电路及其驱动方法、显示面板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553184A (ja) * 1955-12-07
US3299290A (en) * 1964-02-17 1967-01-17 Hewlett Packard Co Two terminal storage circuit employing single transistor and diode combination
US3609410A (en) * 1966-10-14 1971-09-28 Ibm Switching circuits utilizing minority carrier injection in a semiconductor device
US3588544A (en) * 1968-03-20 1971-06-28 Hazeltine Research Inc Signal generating circuits using internal semiconductor capacitance
JPS5149177B1 (ja) * 1970-02-27 1976-12-24

Also Published As

Publication number Publication date
US3898483A (en) 1975-08-05
GB1470559A (en) 1977-04-14
FR2248579A1 (ja) 1975-05-16
AU7303174A (en) 1976-03-11
DE2445455A1 (de) 1975-04-24
FR2248579B1 (ja) 1978-08-11

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