FR2248579B1 - - Google Patents

Info

Publication number
FR2248579B1
FR2248579B1 FR7434744A FR7434744A FR2248579B1 FR 2248579 B1 FR2248579 B1 FR 2248579B1 FR 7434744 A FR7434744 A FR 7434744A FR 7434744 A FR7434744 A FR 7434744A FR 2248579 B1 FR2248579 B1 FR 2248579B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7434744A
Other versions
FR2248579A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of FR2248579A1 publication Critical patent/FR2248579A1/fr
Application granted granted Critical
Publication of FR2248579B1 publication Critical patent/FR2248579B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
FR7434744A 1973-10-18 1974-10-16 Expired FR2248579B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US407710A US3898483A (en) 1973-10-18 1973-10-18 Bipolar memory circuit

Publications (2)

Publication Number Publication Date
FR2248579A1 FR2248579A1 (fr) 1975-05-16
FR2248579B1 true FR2248579B1 (fr) 1978-08-11

Family

ID=23613211

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7434744A Expired FR2248579B1 (fr) 1973-10-18 1974-10-16

Country Status (5)

Country Link
US (1) US3898483A (fr)
JP (1) JPS5068625A (fr)
DE (1) DE2445455A1 (fr)
FR (1) FR2248579B1 (fr)
GB (1) GB1470559A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017180A (fr) * 1973-06-13 1975-02-22
JPS5153483A (fr) * 1974-11-06 1976-05-11 Hitachi Ltd
DE2460269A1 (de) * 1974-12-19 1976-07-01 Siemens Ag Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
US4180866A (en) * 1977-08-01 1979-12-25 Burroughs Corporation Single transistor memory cell employing an amorphous semiconductor threshold device
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
US4181981A (en) * 1977-12-30 1980-01-01 International Business Machines Corporation Bipolar two device dynamic memory cell
US4614897A (en) * 1984-05-11 1986-09-30 Rca Corporation Switching circuit
US4635087A (en) * 1984-12-28 1987-01-06 Motorola, Inc. Monolithic bipolar SCR memory cell
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US6781459B1 (en) 2003-04-24 2004-08-24 Omega Reception Technologies, Inc. Circuit for improved differential amplifier and other applications
JP4670458B2 (ja) * 2005-04-27 2011-04-13 株式会社日立製作所 半導体装置
CN115578978A (zh) * 2022-10-31 2023-01-06 云谷（固安）科技有限公司 像素电路及其驱动方法、显示面板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553184A (fr) * 1955-12-07
US3299290A (en) * 1964-02-17 1967-01-17 Hewlett Packard Co Two terminal storage circuit employing single transistor and diode combination
US3609410A (en) * 1966-10-14 1971-09-28 Ibm Switching circuits utilizing minority carrier injection in a semiconductor device
US3588544A (en) * 1968-03-20 1971-06-28 Hazeltine Research Inc Signal generating circuits using internal semiconductor capacitance
JPS5149177B1 (fr) * 1970-02-27 1976-12-24

Also Published As

Publication number Publication date
US3898483A (en) 1975-08-05
GB1470559A (en) 1977-04-14
FR2248579A1 (fr) 1975-05-16
AU7303174A (en) 1976-03-11
JPS5068625A (fr) 1975-06-09
DE2445455A1 (de) 1975-04-24

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Legal Events

Date Code Title Description
ST Notification of lapse