JPS5062783A - - Google Patents

Info

Publication number
JPS5062783A
JPS5062783A JP48111454A JP11145473A JPS5062783A JP S5062783 A JPS5062783 A JP S5062783A JP 48111454 A JP48111454 A JP 48111454A JP 11145473 A JP11145473 A JP 11145473A JP S5062783 A JPS5062783 A JP S5062783A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48111454A
Other languages
Japanese (ja)
Other versions
JPS5329479B2 (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11145473A priority Critical patent/JPS5329479B2/ja
Priority to GB4194774A priority patent/GB1461869A/en
Priority to NL7413156.A priority patent/NL163911C/xx
Priority to DE2447536A priority patent/DE2447536C2/de
Publication of JPS5062783A publication Critical patent/JPS5062783A/ja
Priority to US05/839,770 priority patent/US4178604A/en
Publication of JPS5329479B2 publication Critical patent/JPS5329479B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
JP11145473A 1973-10-05 1973-10-05 Expired JPS5329479B2 (cs)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11145473A JPS5329479B2 (cs) 1973-10-05 1973-10-05
GB4194774A GB1461869A (en) 1973-10-05 1974-09-26 Semiconductor laser device
NL7413156.A NL163911C (nl) 1973-10-05 1974-10-04 Halfgeleiderlaserinrichting.
DE2447536A DE2447536C2 (de) 1973-10-05 1974-10-04 Halbleiterlaser
US05/839,770 US4178604A (en) 1973-10-05 1977-10-06 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11145473A JPS5329479B2 (cs) 1973-10-05 1973-10-05

Publications (2)

Publication Number Publication Date
JPS5062783A true JPS5062783A (cs) 1975-05-28
JPS5329479B2 JPS5329479B2 (cs) 1978-08-21

Family

ID=14561620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11145473A Expired JPS5329479B2 (cs) 1973-10-05 1973-10-05

Country Status (4)

Country Link
JP (1) JPS5329479B2 (cs)
DE (1) DE2447536C2 (cs)
GB (1) GB1461869A (cs)
NL (1) NL163911C (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
JPS58197788A (ja) * 1982-05-13 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レ−ザ装置の製造方法
JPS59155983A (ja) * 1983-02-24 1984-09-05 Sharp Corp 半導体レ−ザ素子の製造方法
JPS6017976A (ja) * 1983-07-11 1985-01-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS6037793A (ja) * 1983-08-10 1985-02-27 Nec Corp 単一軸モ−ド半導体レ−ザ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045749A (en) * 1975-11-24 1977-08-30 Xerox Corporation Corrugation coupled twin guide laser
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS61222189A (ja) * 1985-03-15 1986-10-02 Sharp Corp 半導体レ−ザ
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
DE3934865A1 (de) * 1989-10-19 1991-04-25 Siemens Ag Hochfrequent modulierbarer halbleiterlaser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
JPS58197788A (ja) * 1982-05-13 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レ−ザ装置の製造方法
JPS59155983A (ja) * 1983-02-24 1984-09-05 Sharp Corp 半導体レ−ザ素子の製造方法
JPS6017976A (ja) * 1983-07-11 1985-01-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS6037793A (ja) * 1983-08-10 1985-02-27 Nec Corp 単一軸モ−ド半導体レ−ザ

Also Published As

Publication number Publication date
NL163911C (nl) 1980-10-15
DE2447536A1 (de) 1975-04-17
JPS5329479B2 (cs) 1978-08-21
GB1461869A (en) 1977-01-19
NL7413156A (nl) 1975-04-08
DE2447536C2 (de) 1983-09-15

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