JPS5040246A - - Google Patents

Info

Publication number
JPS5040246A
JPS5040246A JP49039552A JP3955274A JPS5040246A JP S5040246 A JPS5040246 A JP S5040246A JP 49039552 A JP49039552 A JP 49039552A JP 3955274 A JP3955274 A JP 3955274A JP S5040246 A JPS5040246 A JP S5040246A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49039552A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5040246A publication Critical patent/JPS5040246A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP49039552A 1973-08-03 1974-04-09 Pending JPS5040246A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38548473A 1973-08-03 1973-08-03

Publications (1)

Publication Number Publication Date
JPS5040246A true JPS5040246A (nl) 1975-04-12

Family

ID=23521563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49039552A Pending JPS5040246A (nl) 1973-08-03 1974-04-09

Country Status (3)

Country Link
JP (1) JPS5040246A (nl)
DE (1) DE2422136A1 (nl)
FR (1) FR2239736A1 (nl)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128236A (en) * 1975-04-30 1976-11-09 Nec Corp A memory circuit
JPS5255341A (en) * 1975-10-28 1977-05-06 Motorola Inc Memory circuit
DE2812657A1 (de) * 1977-03-25 1978-09-28 Hitachi Ltd Speichersystem

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
FR2376494A1 (en) * 1976-12-29 1978-07-28 Mostek Corp Random access dynamic memory - has pushpull amplifier for rapid action in triggering digit line potentials and uses transistors as input resistors
DE2801255C2 (de) * 1978-01-12 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Bewerterschaltung für symmetrisch strukturierte Halbleiterspeicher mit Ein-Transistor-Speicherelementen
US4162416A (en) * 1978-01-16 1979-07-24 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4247791A (en) * 1978-04-03 1981-01-27 Rockwell International Corporation CMOS Memory sense amplifier
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
LU87431A1 (de) * 1988-06-08 1989-06-14 Siemens Ag Breitbandsignal-koppeleinrichtung
LU87566A1 (de) * 1989-03-22 1990-01-08 Siemens Ag Breitbandsignal-koppeleinrichtung
FR2650452B1 (fr) * 1989-07-27 1991-11-15 Sgs Thomson Microelectronics Point de croisement pour matrice de commutation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128236A (en) * 1975-04-30 1976-11-09 Nec Corp A memory circuit
JPS5539074B2 (nl) * 1975-04-30 1980-10-08
JPS5255341A (en) * 1975-10-28 1977-05-06 Motorola Inc Memory circuit
DE2812657A1 (de) * 1977-03-25 1978-09-28 Hitachi Ltd Speichersystem

Also Published As

Publication number Publication date
DE2422136A1 (de) 1975-02-20
FR2239736A1 (en) 1975-02-28

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