JPS5040246A - - Google Patents
Info
- Publication number
- JPS5040246A JPS5040246A JP49039552A JP3955274A JPS5040246A JP S5040246 A JPS5040246 A JP S5040246A JP 49039552 A JP49039552 A JP 49039552A JP 3955274 A JP3955274 A JP 3955274A JP S5040246 A JPS5040246 A JP S5040246A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38548473A | 1973-08-03 | 1973-08-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5040246A true JPS5040246A (de) | 1975-04-12 |
Family
ID=23521563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49039552A Pending JPS5040246A (de) | 1973-08-03 | 1974-04-09 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5040246A (de) |
| DE (1) | DE2422136A1 (de) |
| FR (1) | FR2239736A1 (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51128236A (en) * | 1975-04-30 | 1976-11-09 | Nec Corp | A memory circuit |
| JPS5255341A (en) * | 1975-10-28 | 1977-05-06 | Motorola Inc | Memory circuit |
| DE2812657A1 (de) * | 1977-03-25 | 1978-09-28 | Hitachi Ltd | Speichersystem |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2634089B2 (de) * | 1975-08-11 | 1978-01-05 | Schaltungsanordnung zum erfassen schwacher signale | |
| US4061999A (en) * | 1975-12-29 | 1977-12-06 | Mostek Corporation | Dynamic random access memory system |
| JPS5922316B2 (ja) * | 1976-02-24 | 1984-05-25 | 株式会社東芝 | ダイナミツクメモリ装置 |
| US4028557A (en) * | 1976-05-21 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
| FR2376494A1 (en) * | 1976-12-29 | 1978-07-28 | Mostek Corp | Random access dynamic memory - has pushpull amplifier for rapid action in triggering digit line potentials and uses transistors as input resistors |
| DE2801255C2 (de) * | 1978-01-12 | 1984-06-28 | Siemens AG, 1000 Berlin und 8000 München | Bewerterschaltung für symmetrisch strukturierte Halbleiterspeicher mit Ein-Transistor-Speicherelementen |
| US4162416A (en) * | 1978-01-16 | 1979-07-24 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
| US4247791A (en) * | 1978-04-03 | 1981-01-27 | Rockwell International Corporation | CMOS Memory sense amplifier |
| US4301518A (en) * | 1979-11-01 | 1981-11-17 | Texas Instruments Incorporated | Differential sensing of single ended memory array |
| LU87431A1 (de) * | 1988-06-08 | 1989-06-14 | Siemens Ag | Breitbandsignal-koppeleinrichtung |
| LU87566A1 (de) * | 1989-03-22 | 1990-01-08 | Siemens Ag | Breitbandsignal-koppeleinrichtung |
| FR2650452B1 (fr) * | 1989-07-27 | 1991-11-15 | Sgs Thomson Microelectronics | Point de croisement pour matrice de commutation |
-
1974
- 1974-04-09 JP JP49039552A patent/JPS5040246A/ja active Pending
- 1974-04-26 FR FR7414565A patent/FR2239736A1/fr not_active Withdrawn
- 1974-05-08 DE DE19742422136 patent/DE2422136A1/de active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51128236A (en) * | 1975-04-30 | 1976-11-09 | Nec Corp | A memory circuit |
| JPS5539074B2 (de) * | 1975-04-30 | 1980-10-08 | ||
| JPS5255341A (en) * | 1975-10-28 | 1977-05-06 | Motorola Inc | Memory circuit |
| DE2812657A1 (de) * | 1977-03-25 | 1978-09-28 | Hitachi Ltd | Speichersystem |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2239736A1 (en) | 1975-02-28 |
| DE2422136A1 (de) | 1975-02-20 |