JPS5036079A - - Google Patents
Info
- Publication number
- JPS5036079A JPS5036079A JP49073746A JP7374674A JPS5036079A JP S5036079 A JPS5036079 A JP S5036079A JP 49073746 A JP49073746 A JP 49073746A JP 7374674 A JP7374674 A JP 7374674A JP S5036079 A JPS5036079 A JP S5036079A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US374230A US3877063A (en) | 1973-06-27 | 1973-06-27 | Metallization structure and process for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5036079A true JPS5036079A (ja) | 1975-04-04 |
JPS5331715B2 JPS5331715B2 (ja) | 1978-09-04 |
Family
ID=23475885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7374674A Expired JPS5331715B2 (ja) | 1973-06-27 | 1974-06-27 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3877063A (ja) |
JP (1) | JPS5331715B2 (ja) |
DE (1) | DE2430097C3 (ja) |
FR (1) | FR2235491B1 (ja) |
GB (1) | GB1435458A (ja) |
NL (1) | NL7408575A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0417072U (ja) * | 1990-06-01 | 1992-02-12 | ||
JP2004349428A (ja) * | 2003-05-21 | 2004-12-09 | Tadahiro Omi | 半導体装置およびその製造方法 |
US8227912B2 (en) | 2004-10-01 | 2012-07-24 | Foundation For Advancement Of International Science | Semiconductor device with Cu metal-base and manufacturing method thereof |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2402304A1 (fr) * | 1977-08-31 | 1979-03-30 | Int Computers Ltd | Procede de connexion electrique d'une pastille de circuit integre |
US4183041A (en) * | 1978-06-26 | 1980-01-08 | Rca Corporation | Self biasing of a field effect transistor mounted in a flip-chip carrier |
JPS5830147A (ja) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | 半導体装置 |
US4459321A (en) * | 1982-12-30 | 1984-07-10 | International Business Machines Corporation | Process for applying closely overlapped mutually protective barrier films |
FR2561444B1 (fr) * | 1984-03-16 | 1986-09-19 | Thomson Csf | Dispositif semi-conducteur hyperfrequence a connexions externes prises au moyen de poutres |
US4829363A (en) * | 1984-04-13 | 1989-05-09 | Fairchild Camera And Instrument Corp. | Structure for inhibiting dopant out-diffusion |
EP0430702B1 (en) * | 1989-11-30 | 1999-01-13 | Kabushiki Kaisha Toshiba | Line material, electronic device using the line material and liquid crystal display |
US5156998A (en) * | 1991-09-30 | 1992-10-20 | Hughes Aircraft Company | Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes |
US5321279A (en) * | 1992-11-09 | 1994-06-14 | Texas Instruments Incorporated | Base ballasting |
US5683939A (en) * | 1993-04-02 | 1997-11-04 | Harris Corporation | Diamond insulator devices and method of fabrication |
US6337151B1 (en) | 1999-08-18 | 2002-01-08 | International Business Machines Corporation | Graded composition diffusion barriers for chip wiring applications |
US20060231919A1 (en) * | 2005-04-15 | 2006-10-19 | Blacka Robert J | Passive microwave device and method for producing the same |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
US7628309B1 (en) * | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3476531A (en) * | 1966-09-07 | 1969-11-04 | Western Electric Co | Palladium copper contact for soldering |
US3701931A (en) * | 1971-05-06 | 1972-10-31 | Ibm | Gold tantalum-nitrogen high conductivity metallurgy |
US3740523A (en) * | 1971-12-30 | 1973-06-19 | Bell Telephone Labor Inc | Encoding of read only memory by laser vaporization |
-
1973
- 1973-06-27 US US374230A patent/US3877063A/en not_active Expired - Lifetime
-
1974
- 1974-06-21 GB GB2774174A patent/GB1435458A/en not_active Expired
- 1974-06-22 DE DE2430097A patent/DE2430097C3/de not_active Expired
- 1974-06-25 FR FR7422068A patent/FR2235491B1/fr not_active Expired
- 1974-06-26 NL NL7408575A patent/NL7408575A/xx unknown
- 1974-06-27 JP JP7374674A patent/JPS5331715B2/ja not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0417072U (ja) * | 1990-06-01 | 1992-02-12 | ||
JP2004349428A (ja) * | 2003-05-21 | 2004-12-09 | Tadahiro Omi | 半導体装置およびその製造方法 |
JP4700264B2 (ja) * | 2003-05-21 | 2011-06-15 | 財団法人国際科学振興財団 | 半導体装置 |
US8227912B2 (en) | 2004-10-01 | 2012-07-24 | Foundation For Advancement Of International Science | Semiconductor device with Cu metal-base and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5331715B2 (ja) | 1978-09-04 |
GB1435458A (en) | 1976-05-12 |
US3877063A (en) | 1975-04-08 |
FR2235491B1 (ja) | 1978-01-13 |
DE2430097A1 (de) | 1975-01-16 |
FR2235491A1 (ja) | 1975-01-24 |
NL7408575A (ja) | 1974-12-31 |
DE2430097C3 (de) | 1978-09-07 |
DE2430097B2 (de) | 1978-01-12 |