JPS503579A - - Google Patents
Info
- Publication number
- JPS503579A JPS503579A JP48052906A JP5290673A JPS503579A JP S503579 A JPS503579 A JP S503579A JP 48052906 A JP48052906 A JP 48052906A JP 5290673 A JP5290673 A JP 5290673A JP S503579 A JPS503579 A JP S503579A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5290673A JPS568501B2 (enrdf_load_stackoverflow) | 1973-05-12 | 1973-05-12 | |
| IT22570/74A IT1012257B (it) | 1973-05-12 | 1974-05-10 | Dispositivo semiconduttore |
| FR7416453A FR2229141B3 (enrdf_load_stackoverflow) | 1973-05-12 | 1974-05-13 | |
| NL7406423A NL7406423A (enrdf_load_stackoverflow) | 1973-05-12 | 1974-05-13 | |
| DE2423114A DE2423114A1 (de) | 1973-05-12 | 1974-05-13 | Halbleitervorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5290673A JPS568501B2 (enrdf_load_stackoverflow) | 1973-05-12 | 1973-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS503579A true JPS503579A (enrdf_load_stackoverflow) | 1975-01-14 |
| JPS568501B2 JPS568501B2 (enrdf_load_stackoverflow) | 1981-02-24 |
Family
ID=12927870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5290673A Expired JPS568501B2 (enrdf_load_stackoverflow) | 1973-05-12 | 1973-05-12 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS568501B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2423114A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2229141B3 (enrdf_load_stackoverflow) |
| IT (1) | IT1012257B (enrdf_load_stackoverflow) |
| NL (1) | NL7406423A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384146A (ja) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | 半導体装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
| DE2929869C2 (de) * | 1979-07-24 | 1986-04-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte CMOS-Inverterschaltungsanordnung |
| US4253105A (en) * | 1980-07-03 | 1981-02-24 | Rca Corporation | Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device |
| CN105957886B (zh) * | 2016-06-28 | 2019-05-14 | 中国科学院微电子研究所 | 一种碳化硅双极结型晶体管 |
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1973
- 1973-05-12 JP JP5290673A patent/JPS568501B2/ja not_active Expired
-
1974
- 1974-05-10 IT IT22570/74A patent/IT1012257B/it active
- 1974-05-13 DE DE2423114A patent/DE2423114A1/de not_active Withdrawn
- 1974-05-13 FR FR7416453A patent/FR2229141B3/fr not_active Expired
- 1974-05-13 NL NL7406423A patent/NL7406423A/xx not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384146A (ja) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS568501B2 (enrdf_load_stackoverflow) | 1981-02-24 |
| DE2423114A1 (de) | 1974-11-28 |
| NL7406423A (enrdf_load_stackoverflow) | 1974-11-14 |
| FR2229141A1 (enrdf_load_stackoverflow) | 1974-12-06 |
| IT1012257B (it) | 1977-03-10 |
| FR2229141B3 (enrdf_load_stackoverflow) | 1977-03-11 |