JPS5032585B1 - - Google Patents

Info

Publication number
JPS5032585B1
JPS5032585B1 JP46020272A JP2027271A JPS5032585B1 JP S5032585 B1 JPS5032585 B1 JP S5032585B1 JP 46020272 A JP46020272 A JP 46020272A JP 2027271 A JP2027271 A JP 2027271A JP S5032585 B1 JPS5032585 B1 JP S5032585B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46020272A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5032585B1 publication Critical patent/JPS5032585B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • H10P14/263
    • H10P14/265
    • H10P14/3418
    • H10P14/3421

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP46020272A 1970-04-02 1971-04-02 Pending JPS5032585B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7011879A FR2086578A5 (enExample) 1970-04-02 1970-04-02

Publications (1)

Publication Number Publication Date
JPS5032585B1 true JPS5032585B1 (enExample) 1975-10-22

Family

ID=9053302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46020272A Pending JPS5032585B1 (enExample) 1970-04-02 1971-04-02

Country Status (10)

Country Link
US (1) US3755013A (enExample)
JP (1) JPS5032585B1 (enExample)
BE (1) BE765111A (enExample)
CA (1) CA918303A (enExample)
CH (1) CH525027A (enExample)
DE (1) DE2114645C3 (enExample)
ES (1) ES389761A1 (enExample)
FR (1) FR2086578A5 (enExample)
GB (1) GB1336672A (enExample)
NL (1) NL7104148A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933539A (en) * 1973-12-26 1976-01-20 Texas Instruments Incorporated Solution growth system for the preparation of semiconductor materials
JPS5638054B2 (enExample) * 1974-07-04 1981-09-03
DE2445146C3 (de) * 1974-09-20 1979-03-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Verfahren und Vorrichtung zur Ausbildung epitaktischer Schichten
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
DE3036317A1 (de) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und vorrichtung zur fluessigphasenepitaxie
US4507157A (en) * 1981-05-07 1985-03-26 General Electric Company Simultaneously doped light-emitting diode formed by liquid phase epitaxy
DE3306135A1 (de) * 1983-02-22 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von polykirstallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen
US4720373A (en) * 1984-07-13 1988-01-19 Research Corporation Solids refining apparatus
DE3731009A1 (de) * 1987-09-16 1989-03-30 Telefunken Electronic Gmbh Verfahren und vorrichtung zur fluessigphasenepitaxie
US5284781A (en) * 1993-04-30 1994-02-08 Motorola, Inc. Method of forming light emitting diode by LPE

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585087A (en) * 1967-11-22 1971-06-15 Ibm Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
US3558373A (en) * 1968-06-05 1971-01-26 Avco Corp Infrared detecting materials,methods of preparing them,and intermediates
US3692592A (en) * 1970-02-12 1972-09-19 Rca Corp Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase
US3647578A (en) * 1970-04-30 1972-03-07 Gen Electric Selective uniform liquid phase epitaxial growth

Also Published As

Publication number Publication date
US3755013A (en) 1973-08-28
GB1336672A (en) 1973-11-07
NL7104148A (enExample) 1971-10-05
FR2086578A5 (enExample) 1971-12-31
ES389761A1 (es) 1973-06-01
CA918303A (en) 1973-01-02
DE2114645A1 (de) 1971-10-21
DE2114645C3 (de) 1980-09-11
DE2114645B2 (de) 1980-01-10
BE765111A (nl) 1971-09-30
CH525027A (de) 1972-07-15

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