JPS5016152B1 - - Google Patents

Info

Publication number
JPS5016152B1
JPS5016152B1 JP46056121A JP5612171A JPS5016152B1 JP S5016152 B1 JPS5016152 B1 JP S5016152B1 JP 46056121 A JP46056121 A JP 46056121A JP 5612171 A JP5612171 A JP 5612171A JP S5016152 B1 JPS5016152 B1 JP S5016152B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46056121A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5016152B1 publication Critical patent/JPS5016152B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP46056121A 1970-08-05 1971-07-28 Pending JPS5016152B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6112870A 1970-08-05 1970-08-05

Publications (1)

Publication Number Publication Date
JPS5016152B1 true JPS5016152B1 (OSRAM) 1975-06-11

Family

ID=22033770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46056121A Pending JPS5016152B1 (OSRAM) 1970-08-05 1971-07-28

Country Status (5)

Country Link
US (1) US3770519A (OSRAM)
JP (1) JPS5016152B1 (OSRAM)
CA (1) CA921178A (OSRAM)
FR (1) FR2101228B1 (OSRAM)
GB (1) GB1298059A (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
US3959040A (en) * 1971-09-01 1976-05-25 Motorola, Inc. Compound diffused regions for emitter-coupled logic circuits
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
US4177095A (en) * 1977-02-25 1979-12-04 National Semiconductor Corporation Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps
DE2715158A1 (de) * 1977-04-05 1978-10-19 Licentia Gmbh Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
EP0054303B1 (en) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
JPS5871655A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 半導体装置
FR2677171B1 (fr) * 1991-05-31 1994-01-28 Sgs Thomson Microelectronics Sa Transistor de gain en courant predetermine dans un circuit integre bipolaire.
EP0630051B1 (en) * 1993-06-15 1999-09-01 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure bipolar switching transistor with controlled storage time
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3465215A (en) * 1967-06-30 1969-09-02 Texas Instruments Inc Process for fabricating monolithic circuits having matched complementary transistors and product
US3596149A (en) * 1967-08-16 1971-07-27 Hitachi Ltd Semiconductor integrated circuit with reduced minority carrier storage effect
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
US3525911A (en) * 1968-06-06 1970-08-25 Westinghouse Electric Corp Semiconductor integrated circuit including improved diode structure
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices

Also Published As

Publication number Publication date
US3770519A (en) 1973-11-06
CA921178A (en) 1973-02-13
FR2101228B1 (OSRAM) 1974-08-23
DE2136196A1 (de) 1972-02-10
DE2136196B2 (de) 1975-07-10
GB1298059A (en) 1972-11-29
FR2101228A1 (OSRAM) 1972-03-31

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