CA921178A - Isolation diffusion method for making reduced beta transistor diodes - Google Patents

Isolation diffusion method for making reduced beta transistor diodes

Info

Publication number
CA921178A
CA921178A CA119727A CA119727A CA921178A CA 921178 A CA921178 A CA 921178A CA 119727 A CA119727 A CA 119727A CA 119727 A CA119727 A CA 119727A CA 921178 A CA921178 A CA 921178A
Authority
CA
Canada
Prior art keywords
diffusion method
isolation diffusion
reduced beta
making reduced
transistor diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA119727A
Other languages
English (en)
Other versions
CA119727S (en
Inventor
K. Wiedmann Siegfried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA921178A publication Critical patent/CA921178A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA119727A 1970-08-05 1971-08-04 Isolation diffusion method for making reduced beta transistor diodes Expired CA921178A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6112870A 1970-08-05 1970-08-05

Publications (1)

Publication Number Publication Date
CA921178A true CA921178A (en) 1973-02-13

Family

ID=22033770

Family Applications (1)

Application Number Title Priority Date Filing Date
CA119727A Expired CA921178A (en) 1970-08-05 1971-08-04 Isolation diffusion method for making reduced beta transistor diodes

Country Status (5)

Country Link
US (1) US3770519A (OSRAM)
JP (1) JPS5016152B1 (OSRAM)
CA (1) CA921178A (OSRAM)
FR (1) FR2101228B1 (OSRAM)
GB (1) GB1298059A (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
US3959040A (en) * 1971-09-01 1976-05-25 Motorola, Inc. Compound diffused regions for emitter-coupled logic circuits
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
US4177095A (en) * 1977-02-25 1979-12-04 National Semiconductor Corporation Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps
DE2715158A1 (de) * 1977-04-05 1978-10-19 Licentia Gmbh Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
EP0054303B1 (en) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
JPS5871655A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 半導体装置
FR2677171B1 (fr) * 1991-05-31 1994-01-28 Sgs Thomson Microelectronics Sa Transistor de gain en courant predetermine dans un circuit integre bipolaire.
EP0630051B1 (en) * 1993-06-15 1999-09-01 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure bipolar switching transistor with controlled storage time
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3465215A (en) * 1967-06-30 1969-09-02 Texas Instruments Inc Process for fabricating monolithic circuits having matched complementary transistors and product
US3596149A (en) * 1967-08-16 1971-07-27 Hitachi Ltd Semiconductor integrated circuit with reduced minority carrier storage effect
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
US3525911A (en) * 1968-06-06 1970-08-25 Westinghouse Electric Corp Semiconductor integrated circuit including improved diode structure
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices

Also Published As

Publication number Publication date
US3770519A (en) 1973-11-06
FR2101228B1 (OSRAM) 1974-08-23
DE2136196A1 (de) 1972-02-10
JPS5016152B1 (OSRAM) 1975-06-11
DE2136196B2 (de) 1975-07-10
GB1298059A (en) 1972-11-29
FR2101228A1 (OSRAM) 1972-03-31

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