JPS50151064A - - Google Patents
Info
- Publication number
- JPS50151064A JPS50151064A JP5859374A JP5859374A JPS50151064A JP S50151064 A JPS50151064 A JP S50151064A JP 5859374 A JP5859374 A JP 5859374A JP 5859374 A JP5859374 A JP 5859374A JP S50151064 A JPS50151064 A JP S50151064A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5859374A JPS5516451B2 (enExample) | 1974-05-23 | 1974-05-23 | |
| GB21146/75A GB1515571A (en) | 1974-05-23 | 1975-05-19 | Methods of growing thin epitaxial films on a crystal substrate |
| CA227,555A CA1011885A (en) | 1974-05-23 | 1975-05-22 | Molecular beam epitaxy method |
| DE2522921A DE2522921C3 (de) | 1974-05-23 | 1975-05-23 | Verfahren zur epitaktischen Abscheidung dotierter III-V-Verbindungshalbleiter-Schichten |
| FR7516116A FR2272488B1 (enExample) | 1974-05-23 | 1975-05-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5859374A JPS5516451B2 (enExample) | 1974-05-23 | 1974-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50151064A true JPS50151064A (enExample) | 1975-12-04 |
| JPS5516451B2 JPS5516451B2 (enExample) | 1980-05-02 |
Family
ID=13088778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5859374A Expired JPS5516451B2 (enExample) | 1974-05-23 | 1974-05-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5516451B2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269560A (en) * | 1975-12-08 | 1977-06-09 | Mitsubishi Electric Corp | Electronic line irradiation epitaxial method |
| JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
| JPH04216616A (ja) * | 1990-12-17 | 1992-08-06 | A T R Koudenpa Tsushin Kenkyusho:Kk | 分子線エピタキシャル成長薄膜結晶の伝導型制御方法及び当該制御方法を使用する分子線エピタキシャル装置 |
-
1974
- 1974-05-23 JP JP5859374A patent/JPS5516451B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269560A (en) * | 1975-12-08 | 1977-06-09 | Mitsubishi Electric Corp | Electronic line irradiation epitaxial method |
| JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
| JPH04216616A (ja) * | 1990-12-17 | 1992-08-06 | A T R Koudenpa Tsushin Kenkyusho:Kk | 分子線エピタキシャル成長薄膜結晶の伝導型制御方法及び当該制御方法を使用する分子線エピタキシャル装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5516451B2 (enExample) | 1980-05-02 |