JPS50138776A - - Google Patents
Info
- Publication number
- JPS50138776A JPS50138776A JP49044324A JP4432474A JPS50138776A JP S50138776 A JPS50138776 A JP S50138776A JP 49044324 A JP49044324 A JP 49044324A JP 4432474 A JP4432474 A JP 4432474A JP S50138776 A JPS50138776 A JP S50138776A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P50/646—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49044324A JPS50138776A (en:Method) | 1974-04-17 | 1974-04-17 | |
| GB15167/75A GB1507701A (en) | 1974-04-17 | 1975-04-14 | Semiconductor devices |
| CA224,731A CA1023480A (en) | 1974-04-17 | 1975-04-16 | Junction gate type gaas field-effect transistor and method of forming |
| DE2517049A DE2517049C3 (de) | 1974-04-17 | 1975-04-17 | Sperrschicht-Feldeffekttransistor aus m-V Halbleitermaterial |
| FR7511963A FR2268363B1 (en:Method) | 1974-04-17 | 1975-04-17 | |
| US05/793,969 US4075652A (en) | 1974-04-17 | 1977-05-05 | Junction gate type gaas field-effect transistor and method of forming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49044324A JPS50138776A (en:Method) | 1974-04-17 | 1974-04-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50138776A true JPS50138776A (en:Method) | 1975-11-05 |
Family
ID=12688304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49044324A Pending JPS50138776A (en:Method) | 1974-04-17 | 1974-04-17 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS50138776A (en:Method) |
| CA (1) | CA1023480A (en:Method) |
| DE (1) | DE2517049C3 (en:Method) |
| FR (1) | FR2268363B1 (en:Method) |
| GB (1) | GB1507701A (en:Method) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS533776A (en) * | 1976-06-30 | 1978-01-13 | Matsushita Electric Ind Co Ltd | Semiconducotr device and its production |
| JPS5342682A (en) * | 1976-09-30 | 1978-04-18 | Matsushita Electric Ind Co Ltd | Junction type field effect transistor and its production |
| JPS60110175A (ja) * | 1983-08-23 | 1985-06-15 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | 電界効果トランジスタおよびその製造方法 |
| JPS63228672A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 化合物半導体集積回路装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4075651A (en) * | 1976-03-29 | 1978-02-21 | Varian Associates, Inc. | High speed fet employing ternary and quarternary iii-v active layers |
| FR2452791A1 (fr) * | 1979-03-28 | 1980-10-24 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| FR2465317A2 (fr) * | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| JPS55153377A (en) * | 1979-05-18 | 1980-11-29 | Matsushita Electronics Corp | Production of semiconductor device |
-
1974
- 1974-04-17 JP JP49044324A patent/JPS50138776A/ja active Pending
-
1975
- 1975-04-14 GB GB15167/75A patent/GB1507701A/en not_active Expired
- 1975-04-16 CA CA224,731A patent/CA1023480A/en not_active Expired
- 1975-04-17 FR FR7511963A patent/FR2268363B1/fr not_active Expired
- 1975-04-17 DE DE2517049A patent/DE2517049C3/de not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS533776A (en) * | 1976-06-30 | 1978-01-13 | Matsushita Electric Ind Co Ltd | Semiconducotr device and its production |
| JPS5342682A (en) * | 1976-09-30 | 1978-04-18 | Matsushita Electric Ind Co Ltd | Junction type field effect transistor and its production |
| JPS60110175A (ja) * | 1983-08-23 | 1985-06-15 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | 電界効果トランジスタおよびその製造方法 |
| JPS63228672A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 化合物半導体集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2517049A1 (de) | 1975-10-30 |
| FR2268363A1 (en:Method) | 1975-11-14 |
| DE2517049B2 (de) | 1978-09-14 |
| CA1023480A (en) | 1977-12-27 |
| DE2517049C3 (de) | 1979-05-10 |
| GB1507701A (en) | 1978-04-19 |
| FR2268363B1 (en:Method) | 1978-06-23 |