JPS50114182A - - Google Patents

Info

Publication number
JPS50114182A
JPS50114182A JP1761774A JP1761774A JPS50114182A JP S50114182 A JPS50114182 A JP S50114182A JP 1761774 A JP1761774 A JP 1761774A JP 1761774 A JP1761774 A JP 1761774A JP S50114182 A JPS50114182 A JP S50114182A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1761774A
Other languages
Japanese (ja)
Other versions
JPS5435757B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1761774A priority Critical patent/JPS5435757B2/ja
Publication of JPS50114182A publication Critical patent/JPS50114182A/ja
Publication of JPS5435757B2 publication Critical patent/JPS5435757B2/ja
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
JP1761774A 1974-02-15 1974-02-15 Expired JPS5435757B2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1761774A JPS5435757B2 (enrdf_load_stackoverflow) 1974-02-15 1974-02-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1761774A JPS5435757B2 (enrdf_load_stackoverflow) 1974-02-15 1974-02-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8296777A Division JPS53980A (en) 1977-07-13 1977-07-13 Field-effect transistor of high dielectric strength

Publications (2)

Publication Number Publication Date
JPS50114182A true JPS50114182A (enrdf_load_stackoverflow) 1975-09-06
JPS5435757B2 JPS5435757B2 (enrdf_load_stackoverflow) 1979-11-05

Family

ID=11948825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1761774A Expired JPS5435757B2 (enrdf_load_stackoverflow) 1974-02-15 1974-02-15

Country Status (1)

Country Link
JP (1) JPS5435757B2 (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371573A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Field effect transistor of isolating gate type
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
US4172260A (en) * 1976-12-01 1979-10-23 Hitachi, Ltd. Insulated gate field effect transistor with source field shield extending over multiple region channel
JPS54152978A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Manufacture of insulation-gate type field effect transistor
JPS55132054A (en) * 1979-03-28 1980-10-14 Honeywell Inc Semiconductor device and method of fabricating same
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
JPH02197166A (ja) * 1989-10-20 1990-08-03 Seiko Epson Corp 高耐圧ｍｏｓ型半導体装置
JPH0349265A (ja) * 1989-07-17 1991-03-04 Fuji Electric Co Ltd 電界効果トランジスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844056A (enrdf_load_stackoverflow) * 1971-10-08 1973-06-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844056A (enrdf_load_stackoverflow) * 1971-10-08 1973-06-25

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172260A (en) * 1976-12-01 1979-10-23 Hitachi, Ltd. Insulated gate field effect transistor with source field shield extending over multiple region channel
JPS5371573A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Field effect transistor of isolating gate type
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
JPS54152978A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Manufacture of insulation-gate type field effect transistor
JPS55132054A (en) * 1979-03-28 1980-10-14 Honeywell Inc Semiconductor device and method of fabricating same
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
JPH0349265A (ja) * 1989-07-17 1991-03-04 Fuji Electric Co Ltd 電界効果トランジスタ
JPH02197166A (ja) * 1989-10-20 1990-08-03 Seiko Epson Corp 高耐圧ｍｏｓ型半導体装置

Also Published As

Publication number Publication date
JPS5435757B2 (enrdf_load_stackoverflow) 1979-11-05

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