JPS50114182A - - Google Patents
Info
- Publication number
- JPS50114182A JPS50114182A JP1761774A JP1761774A JPS50114182A JP S50114182 A JPS50114182 A JP S50114182A JP 1761774 A JP1761774 A JP 1761774A JP 1761774 A JP1761774 A JP 1761774A JP S50114182 A JPS50114182 A JP S50114182A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1761774A JPS5435757B2 (OSRAM) | 1974-02-15 | 1974-02-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1761774A JPS5435757B2 (OSRAM) | 1974-02-15 | 1974-02-15 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8296777A Division JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50114182A true JPS50114182A (OSRAM) | 1975-09-06 |
| JPS5435757B2 JPS5435757B2 (OSRAM) | 1979-11-05 |
Family
ID=11948825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1761774A Expired JPS5435757B2 (OSRAM) | 1974-02-15 | 1974-02-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5435757B2 (OSRAM) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5371573A (en) * | 1976-12-08 | 1978-06-26 | Hitachi Ltd | Field effect transistor of isolating gate type |
| JPS54116885A (en) * | 1978-03-03 | 1979-09-11 | Hitachi Ltd | Field effect transistor of insulation gate type and its manufacture |
| JPS54121681A (en) * | 1978-03-15 | 1979-09-20 | Hitachi Ltd | Nis-type semiconductor device |
| US4172260A (en) * | 1976-12-01 | 1979-10-23 | Hitachi, Ltd. | Insulated gate field effect transistor with source field shield extending over multiple region channel |
| JPS54152978A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Manufacture of insulation-gate type field effect transistor |
| JPS55132054A (en) * | 1979-03-28 | 1980-10-14 | Honeywell Inc | Semiconductor device and method of fabricating same |
| US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
| JPH02197166A (ja) * | 1989-10-20 | 1990-08-03 | Seiko Epson Corp | 高耐圧ｍｏｓ型半導体装置 |
| JPH0349265A (ja) * | 1989-07-17 | 1991-03-04 | Fuji Electric Co Ltd | 電界効果トランジスタ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844056A (OSRAM) * | 1971-10-08 | 1973-06-25 |
-
1974
- 1974-02-15 JP JP1761774A patent/JPS5435757B2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844056A (OSRAM) * | 1971-10-08 | 1973-06-25 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4172260A (en) * | 1976-12-01 | 1979-10-23 | Hitachi, Ltd. | Insulated gate field effect transistor with source field shield extending over multiple region channel |
| JPS5371573A (en) * | 1976-12-08 | 1978-06-26 | Hitachi Ltd | Field effect transistor of isolating gate type |
| JPS54116885A (en) * | 1978-03-03 | 1979-09-11 | Hitachi Ltd | Field effect transistor of insulation gate type and its manufacture |
| JPS54121681A (en) * | 1978-03-15 | 1979-09-20 | Hitachi Ltd | Nis-type semiconductor device |
| JPS54152978A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Manufacture of insulation-gate type field effect transistor |
| JPS55132054A (en) * | 1979-03-28 | 1980-10-14 | Honeywell Inc | Semiconductor device and method of fabricating same |
| US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
| JPH0349265A (ja) * | 1989-07-17 | 1991-03-04 | Fuji Electric Co Ltd | 電界効果トランジスタ |
| JPH02197166A (ja) * | 1989-10-20 | 1990-08-03 | Seiko Epson Corp | 高耐圧ｍｏｓ型半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5435757B2 (OSRAM) | 1979-11-05 |