JPS4984575A - - Google Patents
Info
- Publication number
- JPS4984575A JPS4984575A JP13297273A JP13297273A JPS4984575A JP S4984575 A JPS4984575 A JP S4984575A JP 13297273 A JP13297273 A JP 13297273A JP 13297273 A JP13297273 A JP 13297273A JP S4984575 A JPS4984575 A JP S4984575A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US309756A US3914136A (en) | 1972-11-27 | 1972-11-27 | Method of making a transmission photocathode device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4984575A true JPS4984575A (US06826419-20041130-M00005.png) | 1974-08-14 |
| JPS531142B2 JPS531142B2 (US06826419-20041130-M00005.png) | 1978-01-14 |
Family
ID=23199555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13297273A Expired JPS531142B2 (US06826419-20041130-M00005.png) | 1972-11-27 | 1973-11-26 |
Country Status (8)
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4015284A (en) * | 1974-03-27 | 1977-03-29 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor photoelectron emission device |
| US3959045A (en) * | 1974-11-18 | 1976-05-25 | Varian Associates | Process for making III-V devices |
| US3960620A (en) * | 1975-04-21 | 1976-06-01 | Rca Corporation | Method of making a transmission mode semiconductor photocathode |
| US3972750A (en) * | 1975-04-30 | 1976-08-03 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
| US3959037A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
| US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
| US4008106A (en) * | 1975-11-13 | 1977-02-15 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating III-V photocathodes |
| US4000503A (en) * | 1976-01-02 | 1976-12-28 | International Audio Visual, Inc. | Cold cathode for infrared image tube |
| US4107723A (en) * | 1977-05-02 | 1978-08-15 | Hughes Aircraft Company | High bandgap window layer for GaAs solar cells and fabrication process therefor |
| DE2842492C2 (de) * | 1978-09-29 | 1986-04-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode |
| US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
| US4539687A (en) * | 1982-12-27 | 1985-09-03 | At&T Bell Laboratories | Semiconductor laser CRT |
| US4906894A (en) * | 1986-06-19 | 1990-03-06 | Canon Kabushiki Kaisha | Photoelectron beam converting device and method of driving the same |
| US4896035A (en) * | 1987-08-06 | 1990-01-23 | Phrasor Scientific, Inc. | High mass ion detection system and method |
| US4830984A (en) * | 1987-08-19 | 1989-05-16 | Texas Instruments Incorporated | Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
| US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
| US4853595A (en) * | 1987-08-31 | 1989-08-01 | Alfano Robert R | Photomultiplier tube having a transmission strip line photocathode and system for use therewith |
| US5404026A (en) * | 1993-01-14 | 1995-04-04 | Regents Of The University Of California | Infrared-sensitive photocathode |
| US5506402A (en) * | 1994-07-29 | 1996-04-09 | Varo Inc. | Transmission mode 1.06 μM photocathode for night vision having an indium gallium arsenide active layer and an aluminum gallium azsenide window layer |
| US6005257A (en) * | 1995-09-13 | 1999-12-21 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
| US5977705A (en) * | 1996-04-29 | 1999-11-02 | Litton Systems, Inc. | Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both |
| US6019913A (en) * | 1998-05-18 | 2000-02-01 | The Regents Of The University Of California | Low work function, stable compound clusters and generation process |
| US7015467B2 (en) * | 2002-10-10 | 2006-03-21 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
| US7446474B2 (en) * | 2002-10-10 | 2008-11-04 | Applied Materials, Inc. | Hetero-junction electron emitter with Group III nitride and activated alkali halide |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL281602A (US06826419-20041130-M00005.png) * | 1959-06-18 | |||
| US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
| US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
| US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
| US3565702A (en) * | 1969-02-14 | 1971-02-23 | Rca Corp | Depositing successive epitaxial semiconductive layers from the liquid phase |
| JPS5141318B1 (US06826419-20041130-M00005.png) * | 1969-04-01 | 1976-11-09 | ||
| US3672992A (en) * | 1969-07-30 | 1972-06-27 | Gen Electric | Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response |
| US3622442A (en) * | 1969-08-21 | 1971-11-23 | Du Pont | Non-woven fibrous webs bonded with cross-linked ethylene/carboxylic acid copolymers and methods of making same |
| GB1239893A (en) * | 1970-03-05 | 1971-07-21 | Standard Telephones Cables Ltd | Improvements in or relating to photocathodes |
| US3770518A (en) * | 1971-01-28 | 1973-11-06 | Varian Associates | Method of making gallium arsenide semiconductive devices |
| US3699401A (en) * | 1971-05-17 | 1972-10-17 | Rca Corp | Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure |
-
1972
- 1972-11-27 US US309756A patent/US3914136A/en not_active Expired - Lifetime
-
1973
- 1973-10-19 IT IT30341/73A patent/IT998785B/it active
- 1973-11-09 GB GB5214573A patent/GB1452917A/en not_active Expired
- 1973-11-19 CA CA186,140A patent/CA998155A/en not_active Expired
- 1973-11-26 JP JP13297273A patent/JPS531142B2/ja not_active Expired
- 1973-11-26 NL NL7316145A patent/NL7316145A/xx not_active Application Discontinuation
- 1973-11-26 FR FR7341951A patent/FR2208187B1/fr not_active Expired
- 1973-11-27 DE DE2359072A patent/DE2359072C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2359072C3 (de) | 1978-11-09 |
| DE2359072B2 (de) | 1978-03-30 |
| FR2208187A1 (US06826419-20041130-M00005.png) | 1974-06-21 |
| DE2359072A1 (de) | 1974-06-06 |
| NL7316145A (US06826419-20041130-M00005.png) | 1974-05-29 |
| JPS531142B2 (US06826419-20041130-M00005.png) | 1978-01-14 |
| FR2208187B1 (US06826419-20041130-M00005.png) | 1978-06-16 |
| US3914136A (en) | 1975-10-21 |
| CA998155A (en) | 1976-10-05 |
| GB1452917A (en) | 1976-10-20 |
| USB309756I5 (US06826419-20041130-M00005.png) | 1975-01-28 |
| IT998785B (it) | 1976-02-20 |
