JPS4977159A - - Google Patents

Info

Publication number
JPS4977159A
JPS4977159A JP48122305A JP12230573A JPS4977159A JP S4977159 A JPS4977159 A JP S4977159A JP 48122305 A JP48122305 A JP 48122305A JP 12230573 A JP12230573 A JP 12230573A JP S4977159 A JPS4977159 A JP S4977159A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48122305A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4977159A publication Critical patent/JPS4977159A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
JP48122305A 1972-11-01 1973-11-01 Pending JPS4977159A (enrdf_load_html_response)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00302991A US3806742A (en) 1972-11-01 1972-11-01 Mos voltage reference circuit

Publications (1)

Publication Number Publication Date
JPS4977159A true JPS4977159A (enrdf_load_html_response) 1974-07-25

Family

ID=23170107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48122305A Pending JPS4977159A (enrdf_load_html_response) 1972-11-01 1973-11-01

Country Status (2)

Country Link
US (1) US3806742A (enrdf_load_html_response)
JP (1) JPS4977159A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595320A (ja) * 1982-06-30 1984-01-12 Mitsubishi Electric Corp オンチツプ電源発生回路
JPS61103223A (ja) * 1984-10-26 1986-05-21 Mitsubishi Electric Corp 定電圧発生回路
JPS63174728U (enrdf_load_html_response) * 1987-04-10 1988-11-14

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
JPS5249139B2 (enrdf_load_html_response) * 1974-09-04 1977-12-15
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
US3996482A (en) * 1975-05-09 1976-12-07 Ncr Corporation One shot multivibrator circuit
JPS51138848A (en) * 1975-05-28 1976-11-30 Hitachi Ltd Steady current circuit
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
JPS5318390A (en) * 1976-08-03 1978-02-20 Toshiba Corp Mos type field effect transistor circuit
US4069431A (en) * 1976-12-22 1978-01-17 Rca Corporation Amplifier circuit
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
US4199693A (en) * 1978-02-07 1980-04-22 Burroughs Corporation Compensated MOS timing network
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
US4197511A (en) * 1978-12-18 1980-04-08 Bell Telephone Laboratories, Incorporated Linear load MOS transistor circuit
FR2447610A1 (fr) * 1979-01-26 1980-08-22 Commissariat Energie Atomique Generateur de tension de reference et circuit de mesure de la tension de seuil d'un transistor mos, applicable a ce generateur de tension de reference
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
US4298811A (en) * 1979-07-20 1981-11-03 Signetics Corporation MOS Voltage divider
JPS5672530A (en) * 1979-11-19 1981-06-16 Nec Corp Semiconductor circuit
US4306185A (en) * 1980-07-01 1981-12-15 Motorola, Inc. Breakdown voltage protection circuit
US4342926A (en) * 1980-11-17 1982-08-03 Motorola, Inc. Bias current reference circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
JPS5822423A (ja) * 1981-07-31 1983-02-09 Hitachi Ltd 基準電圧発生回路
DE3138558A1 (de) * 1981-09-28 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur erzeugung eines von schwankungen einer versorgungsgleichspannung freien gleichspannungspegels
US4473794A (en) * 1982-04-21 1984-09-25 At&T Bell Laboratories Current repeater
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4616172A (en) * 1983-12-29 1986-10-07 At&T Bell Laboratories Voltage generator for telecommunication amplifier
US4634959A (en) * 1985-12-16 1987-01-06 Gte Communication Systems Corp. Temperature compensated reference circuit
JPS62188255A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 基準電圧発生回路
US4736154A (en) * 1987-09-03 1988-04-05 National Semiconductor Corporation Voltage regulator based on punch-through sensor
US4868416A (en) * 1987-12-15 1989-09-19 Gazelle Microcircuits, Inc. FET constant reference voltage generator
US4943945A (en) * 1989-06-13 1990-07-24 International Business Machines Corporation Reference voltage generator for precharging bit lines of a transistor memory
US5029283A (en) * 1990-03-28 1991-07-02 Ncr Corporation Low current driver for gate array
KR940004026Y1 (ko) * 1991-05-13 1994-06-17 금성일렉트론 주식회사 바이어스의 스타트업회로
JPH05289760A (ja) * 1992-04-06 1993-11-05 Mitsubishi Electric Corp 基準電圧発生回路
KR950012018B1 (ko) * 1992-05-21 1995-10-13 삼성전자주식회사 반도체장치의 내부전원 발생회로
JP3556328B2 (ja) * 1995-07-11 2004-08-18 株式会社ルネサステクノロジ 内部電源回路
JP3323119B2 (ja) * 1997-11-28 2002-09-09 株式会社東芝 半導体集積回路装置
US6552603B2 (en) * 2000-06-23 2003-04-22 Ricoh Company Ltd. Voltage reference generation circuit and power source incorporating such circuit
CN103677032A (zh) * 2013-10-25 2014-03-26 苏州贝克微电子有限公司 一种基于击穿现象传感器的稳压器
EP3085449B1 (en) * 2015-04-24 2020-06-03 Alfa Laval Corporate AB Centrifugal separator and thereto related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
US3577047A (en) * 1969-01-15 1971-05-04 Ibm Field effect device
US3612908A (en) * 1969-11-20 1971-10-12 North American Rockwell Metal oxide semiconductor (mos) hysteresis circuits
US3673438A (en) * 1970-12-21 1972-06-27 Burroughs Corp Mos integrated circuit driver system
US3673430A (en) * 1971-08-23 1972-06-27 Us Air Force Cos/mos phase comparator for monolithic integration

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595320A (ja) * 1982-06-30 1984-01-12 Mitsubishi Electric Corp オンチツプ電源発生回路
JPS61103223A (ja) * 1984-10-26 1986-05-21 Mitsubishi Electric Corp 定電圧発生回路
JPS63174728U (enrdf_load_html_response) * 1987-04-10 1988-11-14

Also Published As

Publication number Publication date
US3806742A (en) 1974-04-23

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