JPS4969273A - - Google Patents
Info
- Publication number
- JPS4969273A JPS4969273A JP48102290A JP10229073A JPS4969273A JP S4969273 A JPS4969273 A JP S4969273A JP 48102290 A JP48102290 A JP 48102290A JP 10229073 A JP10229073 A JP 10229073A JP S4969273 A JPS4969273 A JP S4969273A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7212509A NL7212509A (en:Method) | 1972-09-15 | 1972-09-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4969273A true JPS4969273A (en:Method) | 1974-07-04 |
| JPS5244715B2 JPS5244715B2 (en:Method) | 1977-11-10 |
Family
ID=19816940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48102290A Expired JPS5244715B2 (en:Method) | 1972-09-15 | 1973-09-12 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4255677A (en:Method) |
| JP (1) | JPS5244715B2 (en:Method) |
| AU (1) | AU465865B2 (en:Method) |
| CA (1) | CA993571A (en:Method) |
| DE (1) | DE2341899C3 (en:Method) |
| FR (1) | FR2200634B1 (en:Method) |
| GB (1) | GB1450167A (en:Method) |
| IT (1) | IT996680B (en:Method) |
| NL (1) | NL7212509A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS525281A (en) * | 1975-06-30 | 1977-01-14 | Ibm | Substrate bias circuit |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2839073C2 (de) * | 1978-09-07 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Dynamische Stromquelle für Halbleiterbausteine und ihre Verwendung |
| JPS55162257A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor element having substrate bias generator circuit |
| JPS6038028B2 (ja) * | 1979-07-23 | 1985-08-29 | 三菱電機株式会社 | 基板電位発生装置 |
| JPS5619676A (en) * | 1979-07-26 | 1981-02-24 | Fujitsu Ltd | Semiconductor device |
| DE3067215D1 (en) * | 1979-12-13 | 1984-04-26 | Fujitsu Ltd | Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell |
| JPS5771222U (en:Method) * | 1980-10-16 | 1982-04-30 | ||
| US4559548A (en) * | 1981-04-07 | 1985-12-17 | Tokyo Shibaura Denki Kabushiki Kaisha | CMOS Charge pump free of parasitic injection |
| JPS58122766A (ja) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | 半導体装置 |
| US4704625A (en) * | 1982-08-05 | 1987-11-03 | Motorola, Inc. | Capacitor with reduced voltage variability |
| US4670669A (en) * | 1984-08-13 | 1987-06-02 | International Business Machines Corporation | Charge pumping structure for a substrate bias generator |
| ATE75877T1 (de) * | 1985-08-26 | 1992-05-15 | Siemens Ag | Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs- generator und einer schottky-diode. |
| US5286986A (en) * | 1989-04-13 | 1994-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device having CCD and its peripheral bipolar transistors |
| JPH07105458B2 (ja) * | 1989-11-21 | 1995-11-13 | 株式会社東芝 | 複合型集積回路素子 |
| JP2968836B2 (ja) * | 1990-11-30 | 1999-11-02 | 日本テキサス・インスツルメンツ株式会社 | 半導体基板電位発生回路 |
| US5364801A (en) * | 1990-12-17 | 1994-11-15 | Texas Instruments Incorporated | Method of forming a charge pump circuit |
| US6825878B1 (en) | 1998-12-08 | 2004-11-30 | Micron Technology, Inc. | Twin P-well CMOS imager |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3816769A (en) * | 1969-12-17 | 1974-06-11 | Integrated Photomatrix Ltd | Method and circuit element for the selective charging of a semiconductor diffusion region |
| US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| BE789501A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur |
-
1972
- 1972-09-15 NL NL7212509A patent/NL7212509A/xx unknown
-
1973
- 1973-08-18 DE DE2341899A patent/DE2341899C3/de not_active Expired
- 1973-09-11 AU AU60214/73A patent/AU465865B2/en not_active Expired
- 1973-09-12 GB GB4278373A patent/GB1450167A/en not_active Expired
- 1973-09-12 FR FR7332776A patent/FR2200634B1/fr not_active Expired
- 1973-09-12 CA CA180,885A patent/CA993571A/en not_active Expired
- 1973-09-12 JP JP48102290A patent/JPS5244715B2/ja not_active Expired
- 1973-09-12 IT IT69705/73A patent/IT996680B/it active
-
1975
- 1975-02-24 US US05/552,294 patent/US4255677A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS525281A (en) * | 1975-06-30 | 1977-01-14 | Ibm | Substrate bias circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2200634B1 (en:Method) | 1978-01-06 |
| DE2341899A1 (de) | 1974-03-21 |
| DE2341899C3 (de) | 1979-10-04 |
| DE2341899B2 (de) | 1979-02-08 |
| NL7212509A (en:Method) | 1974-03-19 |
| JPS5244715B2 (en:Method) | 1977-11-10 |
| AU6021473A (en) | 1975-03-13 |
| US4255677A (en) | 1981-03-10 |
| GB1450167A (en) | 1976-09-22 |
| FR2200634A1 (en:Method) | 1974-04-19 |
| CA993571A (en) | 1976-07-20 |
| AU465865B2 (en) | 1975-10-09 |
| IT996680B (it) | 1975-12-10 |