JPS4969094A - - Google Patents

Info

Publication number
JPS4969094A
JPS4969094A JP47111174A JP11117472A JPS4969094A JP S4969094 A JPS4969094 A JP S4969094A JP 47111174 A JP47111174 A JP 47111174A JP 11117472 A JP11117472 A JP 11117472A JP S4969094 A JPS4969094 A JP S4969094A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47111174A
Other languages
Japanese (ja)
Other versions
JPS5527462B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11117472A priority Critical patent/JPS5527462B2/ja
Publication of JPS4969094A publication Critical patent/JPS4969094A/ja
Publication of JPS5527462B2 publication Critical patent/JPS5527462B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP11117472A 1972-11-08 1972-11-08 Expired JPS5527462B2 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11117472A JPS5527462B2 (enExample) 1972-11-08 1972-11-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11117472A JPS5527462B2 (enExample) 1972-11-08 1972-11-08

Publications (2)

Publication Number Publication Date
JPS4969094A true JPS4969094A (enExample) 1974-07-04
JPS5527462B2 JPS5527462B2 (enExample) 1980-07-21

Family

ID=14554346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11117472A Expired JPS5527462B2 (enExample) 1972-11-08 1972-11-08

Country Status (1)

Country Link
JP (1) JPS5527462B2 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5065179A (enExample) * 1973-10-09 1975-06-02
JPS56160074A (en) * 1980-04-23 1981-12-09 Hughes Aircraft Co Method of manufacturing mos field effect transistor device
JPS57139968A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Insulated gate fet
JPS57207378A (en) * 1981-06-16 1982-12-20 Nec Corp Manufacture of semiconductor integrated circuit
JPS5925242A (ja) * 1983-07-11 1984-02-09 Hitachi Ltd 半導体装置
JPS6486550A (en) * 1988-08-19 1989-03-31 Seiko Epson Corp Complementary mos integrated circuit
JPH0165151U (enExample) * 1988-09-22 1989-04-26
JPH0357266A (ja) * 1989-07-26 1991-03-12 Mitsubishi Electric Corp Bi―MOS半導体装置及びその製造方法
JPH03181136A (ja) * 1989-12-11 1991-08-07 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04158579A (ja) * 1990-10-22 1992-06-01 Mitsubishi Electric Corp 半導体装置の製造方法
DE112018001695T5 (de) 2017-03-28 2019-12-19 Mitsubishi Heavy Industries, Ltd. Wärmedämmschicht und turbinenelement

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3017251U (ja) * 1995-04-06 1995-10-24 よし 竹元 ヘアーブラシ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PROCEEDINGS OF INTERNATIONAL CONFERENCE ON APPLICATIONS OF ION BEANS TO SEMICONDUCTON TECHNOLOGY=1967 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5065179A (enExample) * 1973-10-09 1975-06-02
JPS56160074A (en) * 1980-04-23 1981-12-09 Hughes Aircraft Co Method of manufacturing mos field effect transistor device
JPS57139968A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Insulated gate fet
JPS57207378A (en) * 1981-06-16 1982-12-20 Nec Corp Manufacture of semiconductor integrated circuit
JPS5925242A (ja) * 1983-07-11 1984-02-09 Hitachi Ltd 半導体装置
JPS6486550A (en) * 1988-08-19 1989-03-31 Seiko Epson Corp Complementary mos integrated circuit
JPH0165151U (enExample) * 1988-09-22 1989-04-26
JPH0357266A (ja) * 1989-07-26 1991-03-12 Mitsubishi Electric Corp Bi―MOS半導体装置及びその製造方法
JPH03181136A (ja) * 1989-12-11 1991-08-07 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04158579A (ja) * 1990-10-22 1992-06-01 Mitsubishi Electric Corp 半導体装置の製造方法
DE112018001695T5 (de) 2017-03-28 2019-12-19 Mitsubishi Heavy Industries, Ltd. Wärmedämmschicht und turbinenelement

Also Published As

Publication number Publication date
JPS5527462B2 (enExample) 1980-07-21

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