JPS4951871A - - Google Patents

Info

Publication number
JPS4951871A
JPS4951871A JP48059393A JP5939373A JPS4951871A JP S4951871 A JPS4951871 A JP S4951871A JP 48059393 A JP48059393 A JP 48059393A JP 5939373 A JP5939373 A JP 5939373A JP S4951871 A JPS4951871 A JP S4951871A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48059393A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4951871A publication Critical patent/JPS4951871A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP48059393A 1972-06-01 1973-05-29 Pending JPS4951871A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25862072A 1972-06-01 1972-06-01

Publications (1)

Publication Number Publication Date
JPS4951871A true JPS4951871A (en:Method) 1974-05-20

Family

ID=22981393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48059393A Pending JPS4951871A (en:Method) 1972-06-01 1973-05-29

Country Status (2)

Country Link
US (1) US3743894A (en:Method)
JP (1) JPS4951871A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114253A (en) * 1981-01-07 1982-07-16 Toshiba Corp Semiconductor device and manufacture thereof
JPS62114241A (ja) * 1985-11-14 1987-05-26 Fujitsu Ltd 半導体装置
JPS63308914A (ja) * 1987-06-11 1988-12-16 Nec Corp アルミニウム合金配線の形成方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
DE2929623C2 (de) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Feinstdraht aus einer Aluminiumlegierung
DE3071878D1 (en) * 1979-11-30 1987-02-05 Western Electric Co Fine-line solid state device
US4438450A (en) 1979-11-30 1984-03-20 Bell Telephone Laboratories, Incorporated Solid state device with conductors having chain-shaped grain structure
US4319264A (en) * 1979-12-17 1982-03-09 International Business Machines Corporation Nickel-gold-nickel conductors for solid state devices
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
US4393096A (en) * 1981-11-16 1983-07-12 International Business Machines Corporation Aluminum-copper alloy evaporated films with low via resistance
JP2850393B2 (ja) * 1988-12-15 1999-01-27 株式会社デンソー アルミニウム配線及びその製造方法
US5606203A (en) * 1993-01-20 1997-02-25 Kabushiki Kaisha Toshiba Semiconductor device having Al-Cu wiring lines where Cu concentration is related to line width
JPH0737435A (ja) * 1993-07-26 1995-02-07 Mitsubishi Electric Corp 絶縁電線
US5442235A (en) * 1993-12-23 1995-08-15 Motorola Inc. Semiconductor device having an improved metal interconnect structure
JPH1064907A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 電気的固体装置及びその製造方法
JPH11307682A (ja) * 1998-04-23 1999-11-05 Hitachi Ltd 半導体装置
DE10297040T5 (de) * 2001-07-10 2004-08-05 Littelfuse, Inc., Des Plaines Elektrostatische Entladungsgerät für Netzwerksysteme
US7034652B2 (en) * 2001-07-10 2006-04-25 Littlefuse, Inc. Electrostatic discharge multifunction resistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927983A (en:Method) * 1972-07-10 1974-03-12

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927983A (en:Method) * 1972-07-10 1974-03-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114253A (en) * 1981-01-07 1982-07-16 Toshiba Corp Semiconductor device and manufacture thereof
JPS62114241A (ja) * 1985-11-14 1987-05-26 Fujitsu Ltd 半導体装置
JPS63308914A (ja) * 1987-06-11 1988-12-16 Nec Corp アルミニウム合金配線の形成方法

Also Published As

Publication number Publication date
US3743894A (en) 1973-07-03

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