Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/761—PN junctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
  • H10D62/137—Collector regions of BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/641—Combinations of only vertical BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/676—Combinations of only thyristors

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Element Separation (AREA)
• Bipolar Transistors (AREA)
• Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=19816170

Family Applications (1)

Country Status (9)

Cited By (1)

Families Citing this family (4)

• 1972
  • 1972-05-31 NL NL7207325A patent/NL7207325A/xx not_active Application Discontinuation
• 1973
  • 1973-05-25 IT IT24644/73A patent/IT987932B/it active
  • 1973-05-25 DE DE2326672A patent/DE2326672A1/de not_active Ceased
  • 1973-05-25 CA CA172,293A patent/CA970474A/en not_active Expired
  • 1973-05-25 GB GB2515273A patent/GB1427261A/en not_active Expired
  • 1973-05-28 JP JP48058760A patent/JPS5112994B2/ja not_active Expired
  • 1973-05-28 AU AU56174/73A patent/AU475239B2/en not_active Expired
  • 1973-05-28 SE SE7307492A patent/SE384948B/xx unknown
  • 1973-05-30 FR FR7319648A patent/FR2186740B1/fr not_active Expired

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