JPS4941956B1 - - Google Patents

Info

Publication number
JPS4941956B1
JPS4941956B1 JP44097583A JP9758369A JPS4941956B1 JP S4941956 B1 JPS4941956 B1 JP S4941956B1 JP 44097583 A JP44097583 A JP 44097583A JP 9758369 A JP9758369 A JP 9758369A JP S4941956 B1 JPS4941956 B1 JP S4941956B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44097583A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4941956B1 publication Critical patent/JPS4941956B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP44097583A 1968-12-31 1969-12-06 Pending JPS4941956B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00788167A US3844858A (en) 1968-12-31 1968-12-31 Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS4941956B1 true JPS4941956B1 (ja) 1974-11-12

Family

ID=25143652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44097583A Pending JPS4941956B1 (ja) 1968-12-31 1969-12-06

Country Status (7)

Country Link
US (1) US3844858A (ja)
JP (1) JPS4941956B1 (ja)
CA (1) CA949683A (ja)
DE (1) DE1963162C3 (ja)
FR (1) FR2030114B1 (ja)
GB (1) GB1288941A (ja)
NL (1) NL168997C (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063271A (en) * 1972-07-26 1977-12-13 Texas Instruments Incorporated FET and bipolar device and circuit process with maximum junction control
US3953264A (en) * 1974-08-29 1976-04-27 International Business Machines Corporation Integrated heater element array and fabrication method
US4338620A (en) * 1978-08-31 1982-07-06 Fujitsu Limited Semiconductor devices having improved alignment marks
US4255207A (en) * 1979-04-09 1981-03-10 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
US4670769A (en) * 1979-04-09 1987-06-02 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
US4309813A (en) * 1979-12-26 1982-01-12 Harris Corporation Mask alignment scheme for laterally and totally dielectrically isolated integrated circuits
JPS6088536U (ja) * 1983-11-24 1985-06-18 住友電気工業株式会社 化合物半導体ウエハ
US4652333A (en) * 1985-06-19 1987-03-24 Honeywell Inc. Etch process monitors for buried heterostructures
US5034347A (en) * 1987-10-05 1991-07-23 Menlo Industries Process for producing an integrated circuit device with substrate via hole and metallized backplane
EP0368584B1 (en) * 1988-11-09 1997-03-19 Sony Corporation Method of manufacturing a semiconductor wafer
CH682528A5 (fr) * 1990-03-16 1993-09-30 Westonbridge Int Ltd Procédé de réalisation par attaque chimique d'au moins une cavité dans un substrat et substrat obtenu par ce procédé.
US5318663A (en) * 1992-12-23 1994-06-07 International Business Machines Corporation Method for thinning SOI films having improved thickness uniformity
US5589083A (en) * 1993-12-11 1996-12-31 Electronics And Telecommunications Research Institute Method of manufacturing microstructure by the anisotropic etching and bonding of substrates
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US5550399A (en) * 1994-11-03 1996-08-27 Kabushiki Kaisha Toshiba Integrated circuit with windowed fuse element and contact pad
US5851928A (en) * 1995-11-27 1998-12-22 Motorola, Inc. Method of etching a semiconductor substrate
KR100277968B1 (ko) * 1998-09-23 2001-03-02 구자홍 질화갈륨 기판 제조방법
US6333553B1 (en) * 1999-05-21 2001-12-25 International Business Machines Corporation Wafer thickness compensation for interchip planarity
US8132775B2 (en) * 2008-04-29 2012-03-13 International Business Machines Corporation Solder mold plates used in packaging process and method of manufacturing solder mold plates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL294124A (ja) * 1962-06-18
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3411200A (en) * 1965-04-14 1968-11-19 Westinghouse Electric Corp Fabrication of semiconductor integrated circuits
FR1481283A (fr) * 1965-04-14 1967-05-19 Westinghouse Electric Corp Procédé de fabrication de circuits semiconducteurs intégrés
US3407479A (en) * 1965-06-28 1968-10-29 Motorola Inc Isolation of semiconductor devices
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
NL144778B (nl) * 1966-12-20 1975-01-15 Western Electric Co Werkwijze voor het vervaardigen van een halfgeleiderinrichting door anisotroop etsen alsmede aldus vervaardigde inrichting.

Also Published As

Publication number Publication date
US3844858A (en) 1974-10-29
CA949683A (en) 1974-06-18
DE1963162B2 (de) 1974-08-08
DE1963162C3 (de) 1975-04-10
NL6919088A (ja) 1970-07-02
NL168997C (nl) 1982-05-17
DE1963162A1 (de) 1970-07-02
GB1288941A (ja) 1972-09-13
FR2030114B1 (ja) 1975-01-10
FR2030114A1 (ja) 1970-10-30
NL168997B (nl) 1981-12-16

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