JPS4936772B1 - - Google Patents

Info

Publication number
JPS4936772B1
JPS4936772B1 JP45113206A JP11320670A JPS4936772B1 JP S4936772 B1 JPS4936772 B1 JP S4936772B1 JP 45113206 A JP45113206 A JP 45113206A JP 11320670 A JP11320670 A JP 11320670A JP S4936772 B1 JPS4936772 B1 JP S4936772B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45113206A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4936772B1 publication Critical patent/JPS4936772B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165Diffusion sources
    • H10P32/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Non-Volatile Memory (AREA)
  • Battery Electrode And Active Subsutance (AREA)
JP45113206A 1970-01-12 1970-12-18 Pending JPS4936772B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US228770A 1970-01-12 1970-01-12

Publications (1)

Publication Number Publication Date
JPS4936772B1 true JPS4936772B1 (OSRAM) 1974-10-03

Family

ID=21700080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45113206A Pending JPS4936772B1 (OSRAM) 1970-01-12 1970-12-18

Country Status (5)

Country Link
JP (1) JPS4936772B1 (OSRAM)
CA (1) CA967856A (OSRAM)
DE (1) DE2100930A1 (OSRAM)
FR (1) FR2076037B1 (OSRAM)
GB (1) GB1335871A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2930780C2 (de) * 1979-07-28 1982-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines VMOS-Transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL140657B (nl) * 1968-06-21 1973-12-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.

Also Published As

Publication number Publication date
FR2076037A1 (OSRAM) 1971-10-15
CA967856A (en) 1975-05-20
GB1335871A (en) 1973-10-31
DE2100930A1 (de) 1971-07-29
FR2076037B1 (OSRAM) 1975-01-10

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