JPS4929779A - - Google Patents
Info
- Publication number
- JPS4929779A JPS4929779A JP47071242A JP7124272A JPS4929779A JP S4929779 A JPS4929779 A JP S4929779A JP 47071242 A JP47071242 A JP 47071242A JP 7124272 A JP7124272 A JP 7124272A JP S4929779 A JPS4929779 A JP S4929779A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7124272A JPS5531616B2 (en:Method) | 1972-07-18 | 1972-07-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7124272A JPS5531616B2 (en:Method) | 1972-07-18 | 1972-07-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4929779A true JPS4929779A (en:Method) | 1974-03-16 |
| JPS5531616B2 JPS5531616B2 (en:Method) | 1980-08-19 |
Family
ID=13455022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7124272A Expired JPS5531616B2 (en:Method) | 1972-07-18 | 1972-07-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5531616B2 (en:Method) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940687A (en:Method) * | 1972-08-23 | 1974-04-16 | ||
| JPS55153345A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55165650A (en) * | 1979-06-12 | 1980-12-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit |
| JPS57114807A (en) * | 1981-01-08 | 1982-07-16 | Erionikusu:Kk | Microdistance measuring device using electron beam |
| JPS59154039A (ja) * | 1983-02-22 | 1984-09-03 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS59155944A (ja) * | 1983-02-25 | 1984-09-05 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS61269308A (ja) * | 1985-05-24 | 1986-11-28 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62169349A (ja) * | 1987-01-14 | 1987-07-25 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS6329970A (ja) * | 1986-07-23 | 1988-02-08 | 新技術事業団 | 撮像素子アレイ及びその製作方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
-
1972
- 1972-07-18 JP JP7124272A patent/JPS5531616B2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940687A (en:Method) * | 1972-08-23 | 1974-04-16 | ||
| JPS55153345A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55165650A (en) * | 1979-06-12 | 1980-12-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit |
| JPS57114807A (en) * | 1981-01-08 | 1982-07-16 | Erionikusu:Kk | Microdistance measuring device using electron beam |
| JPS59154039A (ja) * | 1983-02-22 | 1984-09-03 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS59155944A (ja) * | 1983-02-25 | 1984-09-05 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS61269308A (ja) * | 1985-05-24 | 1986-11-28 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6329970A (ja) * | 1986-07-23 | 1988-02-08 | 新技術事業団 | 撮像素子アレイ及びその製作方法 |
| JPS62169349A (ja) * | 1987-01-14 | 1987-07-25 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5531616B2 (en:Method) | 1980-08-19 |