JPS49124967A - - Google Patents

Info

Publication number
JPS49124967A
JPS49124967A JP48036757A JP3675773A JPS49124967A JP S49124967 A JPS49124967 A JP S49124967A JP 48036757 A JP48036757 A JP 48036757A JP 3675773 A JP3675773 A JP 3675773A JP S49124967 A JPS49124967 A JP S49124967A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48036757A
Other versions
JPS6011457B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48036757A priority Critical patent/JPS6011457B2/ja
Priority to US05/456,291 priority patent/US3939017A/en
Publication of JPS49124967A publication Critical patent/JPS49124967A/ja
Publication of JPS6011457B2 publication Critical patent/JPS6011457B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP48036757A 1973-04-02 1973-04-02 デイポジシヨン法 Expired JPS6011457B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP48036757A JPS6011457B2 (ja) 1973-04-02 1973-04-02 デイポジシヨン法
US05/456,291 US3939017A (en) 1973-04-02 1974-03-29 Process for depositing the deposition agent on the surface of a number of semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48036757A JPS6011457B2 (ja) 1973-04-02 1973-04-02 デイポジシヨン法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP23310384A Division JPS60151300A (ja) 1984-11-07 1984-11-07 減圧デポジシヨン用不純物源

Publications (2)

Publication Number Publication Date
JPS49124967A true JPS49124967A (ja) 1974-11-29
JPS6011457B2 JPS6011457B2 (ja) 1985-03-26

Family

ID=12478603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48036757A Expired JPS6011457B2 (ja) 1973-04-02 1973-04-02 デイポジシヨン法

Country Status (2)

Country Link
US (1) US3939017A (ja)
JP (1) JPS6011457B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145974A (en) * 1974-10-16 1976-04-19 Fujitsu Ltd Fujunbutsuno kakusanhoho
JPS5149675A (en) * 1974-10-28 1976-04-30 Fujitsu Ltd Fujunbutsuno kakusanhoho

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016006A (en) * 1974-10-30 1977-04-05 Hitachi, Ltd. Method of heat treatment of wafers
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
CA1244969A (en) * 1986-10-29 1988-11-15 Mitel Corporation Method for diffusing p-type material using boron disks

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2956913A (en) * 1958-11-20 1960-10-18 Texas Instruments Inc Transistor and method of making same
US3362858A (en) * 1963-01-04 1968-01-09 Westinghouse Electric Corp Fabrication of semiconductor controlled rectifiers
NL6407230A (ja) * 1963-09-28 1965-03-29
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
DE1801187B1 (de) * 1968-10-04 1970-04-16 Siemens Ag Vorrichtung zur Waermebehandlung von Siliziumscheiben

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145974A (en) * 1974-10-16 1976-04-19 Fujitsu Ltd Fujunbutsuno kakusanhoho
JPS5734645B2 (ja) * 1974-10-16 1982-07-24
JPS5149675A (en) * 1974-10-28 1976-04-30 Fujitsu Ltd Fujunbutsuno kakusanhoho

Also Published As

Publication number Publication date
JPS6011457B2 (ja) 1985-03-26
US3939017A (en) 1976-02-17

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