JPS49111580A - - Google Patents

Info

Publication number
JPS49111580A
JPS49111580A JP49013296A JP1329674A JPS49111580A JP S49111580 A JPS49111580 A JP S49111580A JP 49013296 A JP49013296 A JP 49013296A JP 1329674 A JP1329674 A JP 1329674A JP S49111580 A JPS49111580 A JP S49111580A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49013296A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49111580A publication Critical patent/JPS49111580A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
JP49013296A 1973-02-02 1974-01-31 Pending JPS49111580A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732305188 DE2305188A1 (de) 1973-02-02 1973-02-02 Verfahren zur herstellung von polierten halbleiteroberflaechen

Publications (1)

Publication Number Publication Date
JPS49111580A true JPS49111580A (ja) 1974-10-24

Family

ID=5870787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49013296A Pending JPS49111580A (ja) 1973-02-02 1974-01-31

Country Status (6)

Country Link
JP (1) JPS49111580A (ja)
DE (1) DE2305188A1 (ja)
FR (1) FR2216077B1 (ja)
GB (1) GB1449702A (ja)
IT (1) IT1002811B (ja)
NL (1) NL7401454A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230159A (en) * 1975-09-01 1977-03-07 Wacker Chemitronic Method of making semiconductor surface without blur
JPS6287242A (ja) * 1985-05-29 1987-04-21 Nippon Shokubai Kagaku Kogyo Co Ltd 安定な金属酸化物系ゾル組成物
JPS62162462A (ja) * 1986-01-10 1987-07-18 Rohm Co Ltd ウエハ表面仕上方法
JPH01153262A (ja) * 1987-12-10 1989-06-15 Mitsubishi Metal Corp 鏡面研磨方法
JPH0236067A (ja) * 1988-07-25 1990-02-06 Toshiba Corp 研磨方法及びその装置
WO2011122415A1 (ja) 2010-03-29 2011-10-06 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5531582A (en) * 1978-08-15 1980-03-05 Ibm Free polishing device
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
DE3545383A1 (de) * 1985-12-20 1987-07-02 Wacker Chemitronic Verfahren zum eindiffundieren von wasserstoff in halbleiter-, insbesondere siliciumscheiben
JP2651144B2 (ja) * 1987-01-26 1997-09-10 キヤノン株式会社 結晶基材の製造方法
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
JPH02146732A (ja) * 1988-07-28 1990-06-05 Fujitsu Ltd 研摩液及び研摩方法
NL8802028A (nl) * 1988-08-16 1990-03-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385682A (en) * 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230159A (en) * 1975-09-01 1977-03-07 Wacker Chemitronic Method of making semiconductor surface without blur
JPS5410824B2 (ja) * 1975-09-01 1979-05-10
JPS6287242A (ja) * 1985-05-29 1987-04-21 Nippon Shokubai Kagaku Kogyo Co Ltd 安定な金属酸化物系ゾル組成物
JPS62162462A (ja) * 1986-01-10 1987-07-18 Rohm Co Ltd ウエハ表面仕上方法
JPH01153262A (ja) * 1987-12-10 1989-06-15 Mitsubishi Metal Corp 鏡面研磨方法
JPH0236067A (ja) * 1988-07-25 1990-02-06 Toshiba Corp 研磨方法及びその装置
WO2011122415A1 (ja) 2010-03-29 2011-10-06 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
FR2216077A1 (ja) 1974-08-30
NL7401454A (ja) 1974-08-06
FR2216077B1 (ja) 1976-04-30
DE2305188A1 (de) 1974-08-08
GB1449702A (en) 1976-09-15
IT1002811B (it) 1976-05-20

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