JPS4910190B1 - - Google Patents

Info

Publication number
JPS4910190B1
JPS4910190B1 JP45092103A JP9210370A JPS4910190B1 JP S4910190 B1 JPS4910190 B1 JP S4910190B1 JP 45092103 A JP45092103 A JP 45092103A JP 9210370 A JP9210370 A JP 9210370A JP S4910190 B1 JPS4910190 B1 JP S4910190B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45092103A
Other languages
Japanese (ja)
Inventor
R Emeis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS4910190B1 publication Critical patent/JPS4910190B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP45092103A 1970-07-06 1970-10-21 Pending JPS4910190B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2033444A DE2033444C3 (de) 1970-07-06 1970-07-06 Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
JPS4910190B1 true JPS4910190B1 (enExample) 1974-03-08

Family

ID=5775931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45092103A Pending JPS4910190B1 (enExample) 1970-07-06 1970-10-21

Country Status (12)

Country Link
US (1) US3705567A (enExample)
JP (1) JPS4910190B1 (enExample)
AT (1) AT336679B (enExample)
BE (1) BE764513A (enExample)
CA (1) CA944869A (enExample)
CH (1) CH524252A (enExample)
CS (1) CS149456B2 (enExample)
DE (1) DE2033444C3 (enExample)
FR (1) FR2100223A5 (enExample)
GB (1) GB1302993A (enExample)
NL (1) NL7109322A (enExample)
SE (1) SE377286B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51119591A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Device of injecting polishing-sweeping material
JPS51119592A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Polishing-sweeping head

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
EP0077408A1 (en) * 1981-10-16 1983-04-27 Helmut Seier GmbH A method and apparatus for the heat treatment of semiconductor articles
FR2670219B1 (fr) * 1990-12-07 1993-03-19 Europ Propulsion Appareil et creuset pour depot en phase vapeur.
KR930008872B1 (ko) * 1991-02-18 1993-09-16 삼성전자 주식회사 Open-Tube형 불순물 확산장치
JP3971810B2 (ja) * 1995-11-30 2007-09-05 三星電子株式会社 縦型拡散炉
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683875B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP4301564B2 (ja) * 2004-04-27 2009-07-22 株式会社山寿セラミックス 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202485A (en) * 1962-05-01 1965-08-24 Alton F Armington Sublimation apparatus
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
US3394390A (en) * 1965-03-31 1968-07-23 Texas Instruments Inc Method for making compond semiconductor materials
US3371995A (en) * 1965-07-09 1968-03-05 Corning Glass Works Method of making macroscopic silicon carbide fibers with a silica sheath
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51119591A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Device of injecting polishing-sweeping material
JPS51119592A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Polishing-sweeping head

Also Published As

Publication number Publication date
US3705567A (en) 1972-12-12
GB1302993A (enExample) 1973-01-10
CA944869A (en) 1974-04-02
SE377286B (enExample) 1975-06-30
DE2033444B2 (de) 1978-06-22
DE2033444A1 (de) 1972-01-20
FR2100223A5 (enExample) 1972-03-17
DE2033444C3 (de) 1979-02-15
AT336679B (de) 1977-05-25
CS149456B2 (enExample) 1973-07-05
CH524252A (de) 1972-06-15
ATA528771A (de) 1976-09-15
BE764513A (fr) 1971-08-16
NL7109322A (enExample) 1972-01-10

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