JPS4881485A - - Google Patents
Info
- Publication number
- JPS4881485A JPS4881485A JP47011194A JP1119472A JPS4881485A JP S4881485 A JPS4881485 A JP S4881485A JP 47011194 A JP47011194 A JP 47011194A JP 1119472 A JP1119472 A JP 1119472A JP S4881485 A JPS4881485 A JP S4881485A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47011194A JPS5132511B2 (enrdf_load_html_response) | 1972-01-31 | 1972-01-31 | |
| FR7303224A FR2170022B1 (enrdf_load_html_response) | 1972-01-31 | 1973-01-30 | |
| NL7301309.A NL158324B (nl) | 1972-01-31 | 1973-01-30 | Halfgeleiderinrichting met een tegen overspanningen te beschermen veldeffecttransistor met geisoleerde stuurelektrode. |
| CA162,396A CA999654A (en) | 1972-01-31 | 1973-01-30 | Protective circuit for an insulated gate field effect transistor |
| CH128073A CH552285A (de) | 1972-01-31 | 1973-01-30 | Halbleiteranordnung. |
| IT67181/73A IT977703B (it) | 1972-01-31 | 1973-01-30 | Dispositivo semiconduttore |
| DE19732304710 DE2304710C3 (de) | 1972-01-31 | 1973-01-31 | Schutzschaltung für Feldeffekttransistoren |
| GB475473A GB1419542A (en) | 1972-01-31 | 1973-01-31 | Protective arrangement for field effect transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47011194A JPS5132511B2 (enrdf_load_html_response) | 1972-01-31 | 1972-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4881485A true JPS4881485A (enrdf_load_html_response) | 1973-10-31 |
| JPS5132511B2 JPS5132511B2 (enrdf_load_html_response) | 1976-09-13 |
Family
ID=11771233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47011194A Expired JPS5132511B2 (enrdf_load_html_response) | 1972-01-31 | 1972-01-31 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5132511B2 (enrdf_load_html_response) |
| CA (1) | CA999654A (enrdf_load_html_response) |
| CH (1) | CH552285A (enrdf_load_html_response) |
| FR (1) | FR2170022B1 (enrdf_load_html_response) |
| GB (1) | GB1419542A (enrdf_load_html_response) |
| IT (1) | IT977703B (enrdf_load_html_response) |
| NL (1) | NL158324B (enrdf_load_html_response) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226881U (enrdf_load_html_response) * | 1975-08-14 | 1977-02-24 | ||
| JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
| JPS63176012A (ja) * | 1987-01-16 | 1988-07-20 | Mitsubishi Electric Corp | Ｍｉｓトランジスタ回路 |
| JP2015507851A (ja) * | 2012-01-17 | 2015-03-12 | 日本テキサス・インスツルメンツ株式会社 | 共通ソースｆｅｔよりゲート酸化物が厚いバッファ段ｆｅｔを有する静電放電保護回路 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111042A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Gate circuit |
| US4751473A (en) * | 1985-11-05 | 1988-06-14 | Mitsubishi Denki Kabushiki Kaisha | FET amplifier circuit |
| US4737733A (en) * | 1986-10-29 | 1988-04-12 | Rca Corporation | Overdrive control of FET power amplifier |
| JPS63208324A (ja) * | 1987-02-24 | 1988-08-29 | Mitsubishi Electric Corp | 半導体集積回路装置 |
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1972
- 1972-01-31 JP JP47011194A patent/JPS5132511B2/ja not_active Expired
-
1973
- 1973-01-30 FR FR7303224A patent/FR2170022B1/fr not_active Expired
- 1973-01-30 IT IT67181/73A patent/IT977703B/it active
- 1973-01-30 CA CA162,396A patent/CA999654A/en not_active Expired
- 1973-01-30 CH CH128073A patent/CH552285A/xx not_active IP Right Cessation
- 1973-01-30 NL NL7301309.A patent/NL158324B/xx not_active IP Right Cessation
- 1973-01-31 GB GB475473A patent/GB1419542A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226881U (enrdf_load_html_response) * | 1975-08-14 | 1977-02-24 | ||
| JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
| JPS63176012A (ja) * | 1987-01-16 | 1988-07-20 | Mitsubishi Electric Corp | Ｍｉｓトランジスタ回路 |
| JP2015507851A (ja) * | 2012-01-17 | 2015-03-12 | 日本テキサス・インスツルメンツ株式会社 | 共通ソースｆｅｔよりゲート酸化物が厚いバッファ段ｆｅｔを有する静電放電保護回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1419542A (en) | 1975-12-31 |
| FR2170022A1 (enrdf_load_html_response) | 1973-09-14 |
| DE2304710B2 (de) | 1975-07-03 |
| IT977703B (it) | 1974-09-20 |
| DE2304710A1 (de) | 1973-08-09 |
| JPS5132511B2 (enrdf_load_html_response) | 1976-09-13 |
| NL158324B (nl) | 1978-10-16 |
| CH552285A (de) | 1974-07-31 |
| NL7301309A (enrdf_load_html_response) | 1973-08-02 |
| FR2170022B1 (enrdf_load_html_response) | 1976-04-30 |
| CA999654A (en) | 1976-11-09 |