JPS4881485A - - Google Patents

Info

Publication number
JPS4881485A
JPS4881485A JP47011194A JP1119472A JPS4881485A JP S4881485 A JPS4881485 A JP S4881485A JP 47011194 A JP47011194 A JP 47011194A JP 1119472 A JP1119472 A JP 1119472A JP S4881485 A JPS4881485 A JP S4881485A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47011194A
Other languages
Japanese (ja)
Other versions
JPS5132511B2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47011194A priority Critical patent/JPS5132511B2/ja
Priority to CA162,396A priority patent/CA999654A/en
Priority to FR7303224A priority patent/FR2170022B1/fr
Priority to CH128073A priority patent/CH552285A/de
Priority to IT6718173A priority patent/IT977703B/it
Priority to NL7301309A priority patent/NL158324B/xx
Priority to GB475473A priority patent/GB1419542A/en
Priority to DE19732304710 priority patent/DE2304710C3/de
Publication of JPS4881485A publication Critical patent/JPS4881485A/ja
Publication of JPS5132511B2 publication Critical patent/JPS5132511B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • H03F1/523Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP47011194A 1972-01-31 1972-01-31 Expired JPS5132511B2 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP47011194A JPS5132511B2 (de) 1972-01-31 1972-01-31
CA162,396A CA999654A (en) 1972-01-31 1973-01-30 Protective circuit for an insulated gate field effect transistor
FR7303224A FR2170022B1 (de) 1972-01-31 1973-01-30
CH128073A CH552285A (de) 1972-01-31 1973-01-30 Halbleiteranordnung.
IT6718173A IT977703B (it) 1972-01-31 1973-01-30 Dispositivo semiconduttore
NL7301309A NL158324B (nl) 1972-01-31 1973-01-30 Halfgeleiderinrichting met een tegen overspanningen te beschermen veldeffecttransistor met geisoleerde stuurelektrode.
GB475473A GB1419542A (en) 1972-01-31 1973-01-31 Protective arrangement for field effect transistors
DE19732304710 DE2304710C3 (de) 1972-01-31 1973-01-31 Schutzschaltung für Feldeffekttransistoren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47011194A JPS5132511B2 (de) 1972-01-31 1972-01-31

Publications (2)

Publication Number Publication Date
JPS4881485A true JPS4881485A (de) 1973-10-31
JPS5132511B2 JPS5132511B2 (de) 1976-09-13

Family

ID=11771233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47011194A Expired JPS5132511B2 (de) 1972-01-31 1972-01-31

Country Status (7)

Country Link
JP (1) JPS5132511B2 (de)
CA (1) CA999654A (de)
CH (1) CH552285A (de)
FR (1) FR2170022B1 (de)
GB (1) GB1419542A (de)
IT (1) IT977703B (de)
NL (1) NL158324B (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226881U (de) * 1975-08-14 1977-02-24
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS63176012A (ja) * 1987-01-16 1988-07-20 Mitsubishi Electric Corp Misトランジスタ回路
JP2015507851A (ja) * 2012-01-17 2015-03-12 日本テキサス・インスツルメンツ株式会社 共通ソースfetよりゲート酸化物が厚いバッファ段fetを有する静電放電保護回路

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
US4751473A (en) * 1985-11-05 1988-06-14 Mitsubishi Denki Kabushiki Kaisha FET amplifier circuit
US4737733A (en) * 1986-10-29 1988-04-12 Rca Corporation Overdrive control of FET power amplifier
JPS63208324A (ja) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp 半導体集積回路装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226881U (de) * 1975-08-14 1977-02-24
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS63176012A (ja) * 1987-01-16 1988-07-20 Mitsubishi Electric Corp Misトランジスタ回路
JP2015507851A (ja) * 2012-01-17 2015-03-12 日本テキサス・インスツルメンツ株式会社 共通ソースfetよりゲート酸化物が厚いバッファ段fetを有する静電放電保護回路

Also Published As

Publication number Publication date
DE2304710B2 (de) 1975-07-03
NL7301309A (de) 1973-08-02
JPS5132511B2 (de) 1976-09-13
CH552285A (de) 1974-07-31
CA999654A (en) 1976-11-09
DE2304710A1 (de) 1973-08-09
GB1419542A (en) 1975-12-31
NL158324B (nl) 1978-10-16
FR2170022B1 (de) 1976-04-30
FR2170022A1 (de) 1973-09-14
IT977703B (it) 1974-09-20

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