JPS4877765A - - Google Patents

Info

Publication number
JPS4877765A
JPS4877765A JP704072A JP704072A JPS4877765A JP S4877765 A JPS4877765 A JP S4877765A JP 704072 A JP704072 A JP 704072A JP 704072 A JP704072 A JP 704072A JP S4877765 A JPS4877765 A JP S4877765A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP704072A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP704072A priority Critical patent/JPS4877765A/ja
Priority to US05/322,522 priority patent/US3933538A/en
Publication of JPS4877765A publication Critical patent/JPS4877765A/ja
Pending legal-status Critical Current

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Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP704072A 1972-01-18 1972-01-18 Pending JPS4877765A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP704072A JPS4877765A (ja) 1972-01-18 1972-01-18
US05/322,522 US3933538A (en) 1972-01-18 1973-01-10 Method and apparatus for production of liquid phase epitaxial layers of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP704072A JPS4877765A (ja) 1972-01-18 1972-01-18

Publications (1)

Publication Number Publication Date
JPS4877765A true JPS4877765A (ja) 1973-10-19

Family

ID=11654917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP704072A Pending JPS4877765A (ja) 1972-01-18 1972-01-18

Country Status (1)

Country Link
JP (1) JPS4877765A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515956A (ja) * 1974-07-04 1976-01-19 Nippon Telegraph & Telephone
JPS5166773A (ja) * 1974-12-05 1976-06-09 Fujitsu Ltd
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base
JPS51114384A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial crystal growth
JPS5889874A (ja) * 1981-11-16 1983-05-28 ユニバ−シテイ・オブ・デラウエア 薄膜太陽光電池及びその製造方法
JPS61251022A (ja) * 1985-04-27 1986-11-08 Junichi Nishizawa 化合物半導体の液相エピタキシヤル成長法及び成長装置
JPH01176291A (ja) * 1987-12-29 1989-07-12 Tel Sagami Ltd 液相エピタキシャル成長装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638054B2 (ja) * 1974-07-04 1981-09-03
JPS515956A (ja) * 1974-07-04 1976-01-19 Nippon Telegraph & Telephone
JPS5166773A (ja) * 1974-12-05 1976-06-09 Fujitsu Ltd
JPS5720703B2 (ja) * 1974-12-05 1982-04-30
JPS51114384A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial crystal growth
JPS5516530B2 (ja) * 1975-04-01 1980-05-02
JPS5441389B2 (ja) * 1975-04-01 1979-12-07
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base
JPS5889874A (ja) * 1981-11-16 1983-05-28 ユニバ−シテイ・オブ・デラウエア 薄膜太陽光電池及びその製造方法
JPH0758354A (ja) * 1981-11-16 1995-03-03 Univ Delaware 薄膜光電池デバイスの製造方法
JPS61251022A (ja) * 1985-04-27 1986-11-08 Junichi Nishizawa 化合物半導体の液相エピタキシヤル成長法及び成長装置
JPH0564849B2 (ja) * 1985-04-27 1993-09-16 Junichi Nishizawa
JPH01176291A (ja) * 1987-12-29 1989-07-12 Tel Sagami Ltd 液相エピタキシャル成長装置

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