JPS4874190A - - Google Patents

Info

Publication number
JPS4874190A
JPS4874190A JP47127773A JP12777372A JPS4874190A JP S4874190 A JPS4874190 A JP S4874190A JP 47127773 A JP47127773 A JP 47127773A JP 12777372 A JP12777372 A JP 12777372A JP S4874190 A JPS4874190 A JP S4874190A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47127773A
Other languages
Japanese (ja)
Other versions
JPS5547506B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4874190A publication Critical patent/JPS4874190A/ja
Publication of JPS5547506B2 publication Critical patent/JPS5547506B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP12777372A 1971-12-23 1972-12-21 Expired JPS5547506B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21151471A 1971-12-23 1971-12-23

Publications (2)

Publication Number Publication Date
JPS4874190A true JPS4874190A (en:Method) 1973-10-05
JPS5547506B2 JPS5547506B2 (en:Method) 1980-12-01

Family

ID=22787238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12777372A Expired JPS5547506B2 (en:Method) 1971-12-23 1972-12-21

Country Status (13)

Country Link
JP (1) JPS5547506B2 (en:Method)
AT (1) AT326741B (en:Method)
BE (1) BE793094A (en:Method)
CA (1) CA970864A (en:Method)
CH (1) CH551693A (en:Method)
DE (1) DE2262047C2 (en:Method)
ES (1) ES410300A1 (en:Method)
FR (1) FR2164912B1 (en:Method)
GB (1) GB1385282A (en:Method)
IL (1) IL41127A (en:Method)
IT (1) IT974046B (en:Method)
NL (1) NL7217547A (en:Method)
SE (1) SE386045B (en:Method)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (en:Method) * 1972-09-14 1974-05-14
JPS5046033A (en:Method) * 1973-08-28 1975-04-24
JPS5129844A (en:Method) * 1974-01-24 1976-03-13 Commissariat Energie Atomique
JPS52119830A (en) * 1976-03-30 1977-10-07 Philips Nv Charge coupled circuit disposition and device
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771183A (en) * 1985-11-26 1988-09-13 Jabali Pty. Ltd. Photo-electric imaging device having overlaying row and column electrodes forming discrete, independently addressable areas
JP4446292B2 (ja) * 1996-11-01 2010-04-07 ローレンス バークレイ ラボラトリー 光子感知エレメント及びこれを用いたデバイス

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (en:Method) * 1972-09-14 1974-05-14
JPS5046033A (en:Method) * 1973-08-28 1975-04-24
JPS5129844A (en:Method) * 1974-01-24 1976-03-13 Commissariat Energie Atomique
JPS52119830A (en) * 1976-03-30 1977-10-07 Philips Nv Charge coupled circuit disposition and device
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device

Also Published As

Publication number Publication date
ES410300A1 (es) 1975-12-01
IT974046B (it) 1974-06-20
FR2164912A1 (en:Method) 1973-08-03
FR2164912B1 (en:Method) 1977-04-08
IL41127A (en) 1976-03-31
NL7217547A (en:Method) 1973-06-26
CH551693A (de) 1974-07-15
GB1385282A (en) 1975-02-26
DE2262047A1 (de) 1973-07-05
CA970864A (en) 1975-07-08
ATA1099772A (de) 1975-03-15
AT326741B (de) 1975-12-29
IL41127A0 (en) 1973-02-28
SE386045B (sv) 1976-07-26
JPS5547506B2 (en:Method) 1980-12-01
BE793094A (fr) 1973-04-16
DE2262047C2 (de) 1983-03-17

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