JPS4874128A - - Google Patents

Info

Publication number
JPS4874128A
JPS4874128A JP133572A JP133572A JPS4874128A JP S4874128 A JPS4874128 A JP S4874128A JP 133572 A JP133572 A JP 133572A JP 133572 A JP133572 A JP 133572A JP S4874128 A JPS4874128 A JP S4874128A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP133572A
Other languages
Japanese (ja)
Other versions
JPS568438B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP133572A priority Critical patent/JPS568438B2/ja
Priority to CA160,103A priority patent/CA986223A/en
Priority to GB5989872A priority patent/GB1419970A/en
Priority to NL7217793A priority patent/NL7217793A/xx
Priority to DE19722264067 priority patent/DE2264067A1/en
Publication of JPS4874128A publication Critical patent/JPS4874128A/ja
Publication of JPS568438B2 publication Critical patent/JPS568438B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
JP133572A 1971-12-29 1971-12-29 Expired JPS568438B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP133572A JPS568438B2 (en) 1971-12-29 1971-12-29
CA160,103A CA986223A (en) 1971-12-29 1972-12-28 Memory device
GB5989872A GB1419970A (en) 1971-12-29 1972-12-28 Field effect transistor memory circuits
NL7217793A NL7217793A (en) 1971-12-29 1972-12-29
DE19722264067 DE2264067A1 (en) 1971-12-29 1972-12-29 MEMORY CIRCUIT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP133572A JPS568438B2 (en) 1971-12-29 1971-12-29

Publications (2)

Publication Number Publication Date
JPS4874128A true JPS4874128A (en) 1973-10-05
JPS568438B2 JPS568438B2 (en) 1981-02-24

Family

ID=11498613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP133572A Expired JPS568438B2 (en) 1971-12-29 1971-12-29

Country Status (5)

Country Link
JP (1) JPS568438B2 (en)
CA (1) CA986223A (en)
DE (1) DE2264067A1 (en)
GB (1) GB1419970A (en)
NL (1) NL7217793A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134739A (en) * 1974-04-15 1975-10-25
JPS5443634A (en) * 1977-09-13 1979-04-06 Nippon Telegr & Teleph Corp <Ntt> Memory erasing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001286432A1 (en) * 2000-08-14 2002-02-25 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134739A (en) * 1974-04-15 1975-10-25
JPS5443634A (en) * 1977-09-13 1979-04-06 Nippon Telegr & Teleph Corp <Ntt> Memory erasing method
JPS5744996B2 (en) * 1977-09-13 1982-09-25

Also Published As

Publication number Publication date
JPS568438B2 (en) 1981-02-24
NL7217793A (en) 1973-07-03
DE2264067A1 (en) 1973-07-05
CA986223A (en) 1976-03-23
GB1419970A (en) 1975-12-31

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