JPS4871564A - - Google Patents
Info
- Publication number
- JPS4871564A JPS4871564A JP47112225A JP11222572A JPS4871564A JP S4871564 A JPS4871564 A JP S4871564A JP 47112225 A JP47112225 A JP 47112225A JP 11222572 A JP11222572 A JP 11222572A JP S4871564 A JPS4871564 A JP S4871564A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/128—Proton bombardment of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/912—Displacing pn junction
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21046471A | 1971-12-21 | 1971-12-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4871564A true JPS4871564A (en, 2012) | 1973-09-27 |
| JPS5224387B2 JPS5224387B2 (en, 2012) | 1977-06-30 |
Family
ID=22783005
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47112225A Expired JPS5224387B2 (en, 2012) | 1971-12-21 | 1972-11-10 | |
| JP156777A Pending JPS52129284A (en) | 1971-12-21 | 1977-01-12 | Method of producing transistor using ion shock |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP156777A Pending JPS52129284A (en) | 1971-12-21 | 1977-01-12 | Method of producing transistor using ion shock |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3756862A (en, 2012) |
| JP (2) | JPS5224387B2 (en, 2012) |
| CA (1) | CA974661A (en, 2012) |
| DE (1) | DE2262024A1 (en, 2012) |
| FR (1) | FR2164606B1 (en, 2012) |
| GB (1) | GB1415500A (en, 2012) |
| IT (1) | IT974717B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917177A (en, 2012) * | 1972-05-22 | 1974-02-15 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1420065A (en) * | 1972-01-31 | 1976-01-07 | Mullard Ltd | Methods of manufacturing semiconductor bodies |
| JPS4951879A (en, 2012) * | 1972-09-20 | 1974-05-20 | ||
| US3855009A (en) * | 1973-09-20 | 1974-12-17 | Texas Instruments Inc | Ion-implantation and conventional epitaxy to produce dielectrically isolated silicon layers |
| FR2257998B1 (en, 2012) * | 1974-01-10 | 1976-11-26 | Commissariat Energie Atomique | |
| GB1447723A (en) * | 1974-02-08 | 1976-08-25 | Post Office | Semiconductor devices |
| US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
| DE2507613C3 (de) * | 1975-02-21 | 1979-07-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines invers betriebenen Transistors |
| US3982967A (en) * | 1975-03-26 | 1976-09-28 | Ibm Corporation | Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths |
| US3999097A (en) * | 1975-06-30 | 1976-12-21 | International Business Machines Corporation | Ion implantation apparatus utilizing multiple aperture source plate and single aperture accel-decel system |
| US4025364A (en) * | 1975-08-11 | 1977-05-24 | Fairchild Camera And Instrument Corporation | Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases |
| US4013891A (en) * | 1975-12-15 | 1977-03-22 | Ibm Corporation | Method for varying the diameter of a beam of charged particles |
| US4157268A (en) * | 1977-06-16 | 1979-06-05 | International Business Machines Corporation | Localized oxidation enhancement for an integrated injection logic circuit |
| US4133701A (en) * | 1977-06-29 | 1979-01-09 | General Motors Corporation | Selective enhancement of phosphorus diffusion by implanting halogen ions |
| US4149084A (en) * | 1977-11-01 | 1979-04-10 | International Business Machines Corporation | Apparatus for maintaining ion bombardment beam under improved vacuum condition |
| GB2038548B (en) * | 1978-10-27 | 1983-03-23 | Nippon Telegraph & Telephone | Isolating semiconductor device by porous silicon oxide |
| US4383180A (en) * | 1981-05-18 | 1983-05-10 | Varian Associates, Inc. | Particle beam accelerator |
| US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
| US5182626A (en) * | 1989-09-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor and method of manufacturing the same |
| JP3936618B2 (ja) * | 2002-04-19 | 2007-06-27 | 住友化学株式会社 | 薄膜半導体エピタキシャル基板及びその製造方法 |
| CN103943672B (zh) * | 2006-01-20 | 2020-06-16 | 英飞凌科技奥地利股份公司 | 处理含氧半导体晶片的方法及半导体元件 |
| KR101012241B1 (ko) * | 2008-09-24 | 2011-02-08 | 주식회사 동부하이텍 | 반도체 소자의 실리사이드 형성 방법 |
| US10644127B2 (en) * | 2017-07-28 | 2020-05-05 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a transistor structure |
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1971
- 1971-12-21 US US00210464A patent/US3756862A/en not_active Expired - Lifetime
-
1972
- 1972-11-10 JP JP47112225A patent/JPS5224387B2/ja not_active Expired
- 1972-11-29 FR FR7243292A patent/FR2164606B1/fr not_active Expired
- 1972-11-30 GB GB5522672A patent/GB1415500A/en not_active Expired
- 1972-12-14 IT IT32870/72A patent/IT974717B/it active
- 1972-12-14 CA CA159,099A patent/CA974661A/en not_active Expired
- 1972-12-19 DE DE19722262024 patent/DE2262024A1/de not_active Withdrawn
-
1977
- 1977-01-12 JP JP156777A patent/JPS52129284A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917177A (en, 2012) * | 1972-05-22 | 1974-02-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2262024A1 (de) | 1973-07-05 |
| IT974717B (it) | 1974-07-10 |
| JPS5224387B2 (en, 2012) | 1977-06-30 |
| US3756862A (en) | 1973-09-04 |
| JPS52129284A (en) | 1977-10-29 |
| FR2164606B1 (en, 2012) | 1974-08-02 |
| FR2164606A1 (en, 2012) | 1973-08-03 |
| CA974661A (en) | 1975-09-16 |
| GB1415500A (en) | 1975-11-26 |