JPS4866980A - - Google Patents

Info

Publication number
JPS4866980A
JPS4866980A JP10291271A JP10291271A JPS4866980A JP S4866980 A JPS4866980 A JP S4866980A JP 10291271 A JP10291271 A JP 10291271A JP 10291271 A JP10291271 A JP 10291271A JP S4866980 A JPS4866980 A JP S4866980A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10291271A
Other languages
Japanese (ja)
Other versions
JPS5527474B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10291271A priority Critical patent/JPS5527474B2/ja
Publication of JPS4866980A publication Critical patent/JPS4866980A/ja
Publication of JPS5527474B2 publication Critical patent/JPS5527474B2/ja
Expired legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP10291271A 1971-12-17 1971-12-17 Expired JPS5527474B2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10291271A JPS5527474B2 (enrdf_load_stackoverflow) 1971-12-17 1971-12-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10291271A JPS5527474B2 (enrdf_load_stackoverflow) 1971-12-17 1971-12-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1134482A Division JPS5853520B2 (ja) 1982-01-27 1982-01-27 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS4866980A true JPS4866980A (enrdf_load_stackoverflow) 1973-09-13
JPS5527474B2 JPS5527474B2 (enrdf_load_stackoverflow) 1980-07-21

Family

ID=14340051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10291271A Expired JPS5527474B2 (enrdf_load_stackoverflow) 1971-12-17 1971-12-17

Country Status (1)

Country Link
JP (1) JPS5527474B2 (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081486A (enrdf_load_stackoverflow) * 1973-11-12 1975-07-02
JPS5096189A (enrdf_load_stackoverflow) * 1973-12-24 1975-07-31
JPS5197390A (ja) * 1975-02-21 1976-08-26 Handotaireezasoshi
JPS51100688A (ja) * 1975-03-03 1976-09-06 Nippon Electric Co Chunyugatahandotaireezasoshi
JPS5224480A (en) * 1975-08-20 1977-02-23 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS52149483A (en) * 1976-06-08 1977-12-12 Nippon Telegr & Teleph Corp <Ntt> Secmiconductor laser
JPS5361985A (en) * 1976-11-15 1978-06-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPS5425183A (en) * 1977-07-27 1979-02-24 Nec Corp Manufacture for semiconductor laser device
JPS56112790A (en) * 1980-02-12 1981-09-05 Semiconductor Res Found Junction type semiconductor laser
JPS58171881A (ja) * 1982-03-29 1983-10-08 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体結晶レーザの製造方法
JPS58225677A (ja) * 1982-06-23 1983-12-27 Agency Of Ind Science & Technol 高出力半導体レ−ザ装置
JPS6063982A (ja) * 1984-07-30 1985-04-12 Hitachi Ltd 半導体レ−ザ素子
JPS60113983A (ja) * 1983-11-26 1985-06-20 Mitsubishi Electric Corp 半導体発光装置およびその製造方法
JPS6164164A (ja) * 1984-07-11 1986-04-02 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン バイポ−ラトランジスタ内のエミツタエネルギギヤツプを増加させるイオン注入
JPS61220394A (ja) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp レーザダイオードの製造方法
JPH02213185A (ja) * 1989-02-13 1990-08-24 Nec Corp 半導体レーザ

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081486A (enrdf_load_stackoverflow) * 1973-11-12 1975-07-02
JPS5096189A (enrdf_load_stackoverflow) * 1973-12-24 1975-07-31
JPS5197390A (ja) * 1975-02-21 1976-08-26 Handotaireezasoshi
JPS51100688A (ja) * 1975-03-03 1976-09-06 Nippon Electric Co Chunyugatahandotaireezasoshi
JPS5224480A (en) * 1975-08-20 1977-02-23 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS52149483A (en) * 1976-06-08 1977-12-12 Nippon Telegr & Teleph Corp <Ntt> Secmiconductor laser
JPS5361985A (en) * 1976-11-15 1978-06-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPS5425183A (en) * 1977-07-27 1979-02-24 Nec Corp Manufacture for semiconductor laser device
JPS56112790A (en) * 1980-02-12 1981-09-05 Semiconductor Res Found Junction type semiconductor laser
JPS58171881A (ja) * 1982-03-29 1983-10-08 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体結晶レーザの製造方法
JPS58225677A (ja) * 1982-06-23 1983-12-27 Agency Of Ind Science & Technol 高出力半導体レ−ザ装置
JPS60113983A (ja) * 1983-11-26 1985-06-20 Mitsubishi Electric Corp 半導体発光装置およびその製造方法
JPS6164164A (ja) * 1984-07-11 1986-04-02 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン バイポ−ラトランジスタ内のエミツタエネルギギヤツプを増加させるイオン注入
JPS6063982A (ja) * 1984-07-30 1985-04-12 Hitachi Ltd 半導体レ−ザ素子
JPS61220394A (ja) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp レーザダイオードの製造方法
JPH02213185A (ja) * 1989-02-13 1990-08-24 Nec Corp 半導体レーザ

Also Published As

Publication number Publication date
JPS5527474B2 (enrdf_load_stackoverflow) 1980-07-21

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