JPS4855663A - - Google Patents

Info

Publication number
JPS4855663A
JPS4855663A JP46089701A JP8970171A JPS4855663A JP S4855663 A JPS4855663 A JP S4855663A JP 46089701 A JP46089701 A JP 46089701A JP 8970171 A JP8970171 A JP 8970171A JP S4855663 A JPS4855663 A JP S4855663A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46089701A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46089701A priority Critical patent/JPS4855663A/ja
Priority to GB5013572A priority patent/GB1377699A/en
Priority to CH1630072A priority patent/CH565452A5/xx
Priority to DE2255107A priority patent/DE2255107A1/de
Publication of JPS4855663A publication Critical patent/JPS4855663A/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H10P32/1414
    • H10P32/171

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP46089701A 1971-11-10 1971-11-10 Pending JPS4855663A (enExample)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP46089701A JPS4855663A (enExample) 1971-11-10 1971-11-10
GB5013572A GB1377699A (en) 1971-11-10 1972-10-31 Method of making a semiconductor device and a semiconductor device when made thereby
CH1630072A CH565452A5 (enExample) 1971-11-10 1972-11-09
DE2255107A DE2255107A1 (de) 1971-11-10 1972-11-10 Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46089701A JPS4855663A (enExample) 1971-11-10 1971-11-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4406276A Division JPS5234667A (en) 1976-04-16 1976-04-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS4855663A true JPS4855663A (enExample) 1973-08-04

Family

ID=13978063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46089701A Pending JPS4855663A (enExample) 1971-11-10 1971-11-10

Country Status (4)

Country Link
JP (1) JPS4855663A (enExample)
CH (1) CH565452A5 (enExample)
DE (1) DE2255107A1 (enExample)
GB (1) GB1377699A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106568A (enExample) * 1973-12-22 1975-08-22
JPS50134365A (enExample) * 1974-04-09 1975-10-24
JPS50159253A (enExample) * 1974-06-12 1975-12-23
JPS5153462A (en) * 1974-11-05 1976-05-11 Fujitsu Ltd Handotaisochino seizohoho
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS5164370A (enExample) * 1974-08-16 1976-06-03 Siemens Ag
JPS5165561A (enExample) * 1974-10-18 1976-06-07 Siemens Ag
JPS5188174A (en) * 1975-01-31 1976-08-02 Handotaisochino seizohoho
JPS5222887A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Semiconductor unit manufacturing system
JPS58108767A (ja) * 1981-12-22 1983-06-28 Nec Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549914A (en) * 1984-04-09 1985-10-29 At&T Bell Laboratories Integrated circuit contact technique

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106568A (enExample) * 1973-12-22 1975-08-22
JPS50134365A (enExample) * 1974-04-09 1975-10-24
JPS50159253A (enExample) * 1974-06-12 1975-12-23
JPS5164370A (enExample) * 1974-08-16 1976-06-03 Siemens Ag
JPS5165561A (enExample) * 1974-10-18 1976-06-07 Siemens Ag
JPS5153462A (en) * 1974-11-05 1976-05-11 Fujitsu Ltd Handotaisochino seizohoho
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS5188174A (en) * 1975-01-31 1976-08-02 Handotaisochino seizohoho
JPS5222887A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Semiconductor unit manufacturing system
JPS58108767A (ja) * 1981-12-22 1983-06-28 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
DE2255107A1 (de) 1973-05-17
CH565452A5 (enExample) 1975-08-15
GB1377699A (en) 1974-12-18

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