JPS4849382A - - Google Patents
Info
- Publication number
- JPS4849382A JPS4849382A JP8329371A JP8329371A JPS4849382A JP S4849382 A JPS4849382 A JP S4849382A JP 8329371 A JP8329371 A JP 8329371A JP 8329371 A JP8329371 A JP 8329371A JP S4849382 A JPS4849382 A JP S4849382A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8329371A JPS5112507B2 (enExample) | 1971-10-22 | 1971-10-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8329371A JPS5112507B2 (enExample) | 1971-10-22 | 1971-10-22 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52005961A Division JPS5858814B2 (ja) | 1977-01-24 | 1977-01-24 | 絶縁ゲ−ト半導体装置の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4849382A true JPS4849382A (enExample) | 1973-07-12 |
| JPS5112507B2 JPS5112507B2 (enExample) | 1976-04-20 |
Family
ID=13798331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8329371A Expired JPS5112507B2 (enExample) | 1971-10-22 | 1971-10-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5112507B2 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2802048A1 (de) | 1977-01-26 | 1978-07-27 | Mostek Corp | Verfahren zur herstellung einer halbleitereinrichtung |
| JPS53103380A (en) * | 1977-02-22 | 1978-09-08 | Oki Electric Ind Co Ltd | Production of semiconductor device |
| JPS53108381A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Manufacture for semiconductor device |
| JPS53148983A (en) * | 1977-06-01 | 1978-12-26 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS56153760A (en) * | 1980-10-20 | 1981-11-27 | Hitachi Ltd | Semiconductor integrated circuit device |
| DE2858815C2 (de) * | 1977-01-26 | 1996-01-18 | Sgs Thomson Microelectronics | Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
-
1971
- 1971-10-22 JP JP8329371A patent/JPS5112507B2/ja not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2802048A1 (de) | 1977-01-26 | 1978-07-27 | Mostek Corp | Verfahren zur herstellung einer halbleitereinrichtung |
| DE2858815C2 (de) * | 1977-01-26 | 1996-01-18 | Sgs Thomson Microelectronics | Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung |
| JPH0918003A (ja) * | 1977-01-26 | 1997-01-17 | Sgs Thomson Microelectron Inc | 電界効果トランジスタの製造方法 |
| JPS53103380A (en) * | 1977-02-22 | 1978-09-08 | Oki Electric Ind Co Ltd | Production of semiconductor device |
| JPS53108381A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Manufacture for semiconductor device |
| JPS53148983A (en) * | 1977-06-01 | 1978-12-26 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS56153760A (en) * | 1980-10-20 | 1981-11-27 | Hitachi Ltd | Semiconductor integrated circuit device |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
| US5710453A (en) * | 1993-11-30 | 1998-01-20 | Sgs-Thomson Microelectronics, Inc. | Transistor structure and method for making same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5112507B2 (enExample) | 1976-04-20 |