JPS4849382A - - Google Patents

Info

Publication number
JPS4849382A
JPS4849382A JP8329371A JP8329371A JPS4849382A JP S4849382 A JPS4849382 A JP S4849382A JP 8329371 A JP8329371 A JP 8329371A JP 8329371 A JP8329371 A JP 8329371A JP S4849382 A JPS4849382 A JP S4849382A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8329371A
Other languages
Japanese (ja)
Other versions
JPS5112507B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8329371A priority Critical patent/JPS5112507B2/ja
Publication of JPS4849382A publication Critical patent/JPS4849382A/ja
Publication of JPS5112507B2 publication Critical patent/JPS5112507B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP8329371A 1971-10-22 1971-10-22 Expired JPS5112507B2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8329371A JPS5112507B2 (enrdf_load_stackoverflow) 1971-10-22 1971-10-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8329371A JPS5112507B2 (enrdf_load_stackoverflow) 1971-10-22 1971-10-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP52005961A Division JPS5858814B2 (ja) 1977-01-24 1977-01-24 絶縁ゲ−ト半導体装置の製造法

Publications (2)

Publication Number Publication Date
JPS4849382A true JPS4849382A (enrdf_load_stackoverflow) 1973-07-12
JPS5112507B2 JPS5112507B2 (enrdf_load_stackoverflow) 1976-04-20

Family

ID=13798331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8329371A Expired JPS5112507B2 (enrdf_load_stackoverflow) 1971-10-22 1971-10-22

Country Status (1)

Country Link
JP (1) JPS5112507B2 (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802048A1 (de) 1977-01-26 1978-07-27 Mostek Corp Verfahren zur herstellung einer halbleitereinrichtung
JPS53103380A (en) * 1977-02-22 1978-09-08 Oki Electric Ind Co Ltd Production of semiconductor device
JPS53108381A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Manufacture for semiconductor device
JPS53148983A (en) * 1977-06-01 1978-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS56153760A (en) * 1980-10-20 1981-11-27 Hitachi Ltd Semiconductor integrated circuit device
DE2858815C2 (de) * 1977-01-26 1996-01-18 Sgs Thomson Microelectronics Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung
US5668028A (en) * 1993-11-30 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of depositing thin nitride layer on gate oxide dielectric

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802048A1 (de) 1977-01-26 1978-07-27 Mostek Corp Verfahren zur herstellung einer halbleitereinrichtung
DE2858815C2 (de) * 1977-01-26 1996-01-18 Sgs Thomson Microelectronics Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung
JPH0918003A (ja) * 1977-01-26 1997-01-17 Sgs Thomson Microelectron Inc 電界効果トランジスタの製造方法
JPS53103380A (en) * 1977-02-22 1978-09-08 Oki Electric Ind Co Ltd Production of semiconductor device
JPS53108381A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Manufacture for semiconductor device
JPS53148983A (en) * 1977-06-01 1978-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS56153760A (en) * 1980-10-20 1981-11-27 Hitachi Ltd Semiconductor integrated circuit device
US5668028A (en) * 1993-11-30 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of depositing thin nitride layer on gate oxide dielectric
US5710453A (en) * 1993-11-30 1998-01-20 Sgs-Thomson Microelectronics, Inc. Transistor structure and method for making same

Also Published As

Publication number Publication date
JPS5112507B2 (enrdf_load_stackoverflow) 1976-04-20

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