JPS475708A - - Google Patents

Info

Publication number
JPS475708A
JPS475708A JP6333071A JP6333071A JPS475708A JP S475708 A JPS475708 A JP S475708A JP 6333071 A JP6333071 A JP 6333071A JP 6333071 A JP6333071 A JP 6333071A JP S475708 A JPS475708 A JP S475708A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6333071A
Other languages
Japanese (ja)
Other versions
JPS5435052B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS475708A publication Critical patent/JPS475708A/ja
Publication of JPS5435052B1 publication Critical patent/JPS5435052B1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H03K19/01812—Interface arrangements with at least one differential stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP6333071A 1970-08-19 1971-08-19 Pending JPS5435052B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65225A US3684897A (en) 1970-08-19 1970-08-19 Dynamic mos memory array timing system

Publications (2)

Publication Number Publication Date
JPS475708A true JPS475708A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-03-27
JPS5435052B1 JPS5435052B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-10-31

Family

ID=22061193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6333071A Pending JPS5435052B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-08-19 1971-08-19

Country Status (4)

Country Link
US (1) US3684897A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5435052B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2141680C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7111445A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118123A (en) * 1980-02-25 1981-09-17 Matsushita Electric Ind Co Ltd Microcomputer circuit
JPS56125427U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1980-02-21 1981-09-24
JPS59187970U (ja) * 1983-06-02 1984-12-13 柏口　雅彦 釣針
JPS62176625A (ja) * 1986-01-28 1987-08-03 Toyoji Kamimura 微小釣針製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728552A (en) * 1971-03-30 1973-04-17 Siemens Ag Control device for a selective matrix of a data memory with selective access
US3786437A (en) * 1972-01-03 1974-01-15 Honeywell Inf Systems Random access memory system utilizing an inverting cell concept
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3769522A (en) * 1972-01-18 1973-10-30 Honeywell Inf Systems Apparatus and method for converting mos circuit signals to ttl circuit signals
US3790961A (en) * 1972-06-09 1974-02-05 Advanced Memory Syst Inc Random access dynamic semiconductor memory system
US3866061A (en) * 1973-08-27 1975-02-11 Burroughs Corp Overlap timing control circuit for conditioning signals in a semiconductor memory
US4045690A (en) * 1976-02-17 1977-08-30 Burroughs Corporation High speed differential to ttl converter
JPS55132593A (en) * 1979-04-02 1980-10-15 Fujitsu Ltd Refresh control method for memory unit
US4360903A (en) * 1980-09-10 1982-11-23 Mostek Corporation Clocking system for a self-refreshed dynamic memory
WO1982000915A1 (en) * 1980-09-10 1982-03-18 Plachno R Clocking system for a self-refreshed dynamic memory
JPS585029A (ja) * 1981-06-30 1983-01-12 Fujitsu Ltd レベル変換回路
US4631701A (en) * 1983-10-31 1986-12-23 Ncr Corporation Dynamic random access memory refresh control system
DE3671675D1 (de) * 1985-09-30 1990-07-05 Siemens Ag Verfahren zum auffrischen von daten in einer dynamischen ram-speichereinheit, und steuereinheit zur durchfuehrung dieses verfahrens.
US4973863A (en) * 1989-12-28 1990-11-27 Eastman Kodak Company TTL-ECL interface circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343130A (en) * 1964-08-27 1967-09-19 Fabri Tek Inc Selection matrix line capacitance recharge system
US3518635A (en) * 1967-08-22 1970-06-30 Bunker Ramo Digital memory apparatus
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition
US3736572A (en) * 1970-08-19 1973-05-29 Cogar Corp Bipolar driver for dynamic mos memory array chip

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125427U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1980-02-21 1981-09-24
JPS56118123A (en) * 1980-02-25 1981-09-17 Matsushita Electric Ind Co Ltd Microcomputer circuit
JPS59187970U (ja) * 1983-06-02 1984-12-13 柏口　雅彦 釣針
JPS62176625A (ja) * 1986-01-28 1987-08-03 Toyoji Kamimura 微小釣針製造方法

Also Published As

Publication number Publication date
JPS5435052B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-10-31
DE2141680C3 (de) 1981-04-09
DE2141680B2 (de) 1980-08-28
DE2141680A1 (de) 1972-02-24
US3684897A (en) 1972-08-15
NL7111445A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-02-22

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